Integration of BEoL Compatible 1T1C FeFET Memory Into an Established CMOS Technology

Recently, hafnium oxide based ferroelectric memories gained great attention due to good scalability, high speed operation, and low power consumption. In contrast to the FRAM concept, the FeFET offers non-destructive read-out. However, the integration of the FeFET into an established CMOS technology...

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Bibliographic Details
Published in2022 IEEE International Memory Workshop (IMW) pp. 1 - 4
Main Authors Lehninger, David, Mahne, Hannes, Ali, Tarek, Hoffmann, Raik, Olivo, Ricardo, Lederer, Maximilian, Mertens, Konstantin, Kampfe, Thomas, Biedermann, Kati, Landwehr, Matthias, Heinig, Andreas, Wang, Defu, Shen, Yukai, Bernert, Kerstin, Thiem, Steffen, Seidel, Konrad
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2022
Subjects
BEoL integration
Capacitors
CMOS technology
Fabrication
FeFET
FeFETs
ferroelectric
hafnium oxide
memory
Switches
Transistors
Voltage
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Summary:Recently, hafnium oxide based ferroelectric memories gained great attention due to good scalability, high speed operation, and low power consumption. In contrast to the FRAM concept, the FeFET offers non-destructive read-out. However, the integration of the FeFET into an established CMOS technology entails several challenges. Herein, an 1T1C FeFET with separated transistor (1T) and ferroelectric capacitor (1C) is described and demonstrated. This alternative approach can be integrated into standard process technologies without introducing significant modifications of the front-end-of-line. All important steps starting from the integration of MFM devices into the BEoL through the fabrication and characterization of single 1T1C memory cells with various capacitor area ratios for bit cell tuning up to the initial demonstration of an 8 kbit test-array are covered.
ISSN:2573-7503
DOI:10.1109/IMW52921.2022.9779252