The investigation of the zero temperature coefficient point of power MOSFET

• Published in: Journal of semiconductors Vol. 37; no. 6; pp. 101 - 105
• Main Author: 张博文 张小玲 熊文雯 佘烁杰 谢雪松
• Format: Journal Article
• Language: English
• Published: Chinese Institute of Electronics 01.06.2016
• Subjects: mobility; power MOSFET; threshold voltage; ZTC; 功率MOSFET; 栅极电压; 正温度系数; 线性区域; 负温度系数; 载流子迁移率; 阈值电压; 零温度系数
• DOI: 10.1088/1674-4926/37/6/064011
• ISSN: 1674-4926

The paper investigates the zero temperature coefficient（ZTC） point of power MOSFET,based on the output characteristic of power MOSFET,the temperature coefficient of threshold voltage and the carrier mobility.It is found that the gate voltage has a big effect on the ZTC point.The result indicates that there are three types of temperature coefficient under different gate voltage.When the gate voltage is near the threshold voltage,both the linear region and saturation region shows a large positive temperature coefficient.With the increase of gate voltage,the temperature coefficient of the linear region changes from positive to negative,when the saturation region still remains positive,giving rise to the ZTC point.When the gate voltage is high enough,the negative temperature coefficient is present on both the linear and saturation region,resulting in no ZTC point.According to the experimental result,the change of ZTC point as a function of temperature is larger when the gate voltage is higher.The carrier mobility is also discussed,displaying a positive temperature coefficient at low gate voltage due to the free charge screen effect.