Highly uniform switching of HfO2−x based RRAM achieved through Ar plasma treatment for low power and multilevel storage

• Published in: Applied surface science Vol. 458; pp. 216 - 221
• Main Authors: Qi, Meng, Tao, Ye, Wang, Zhongqiang, Xu, Haiyang, Zhao, Xiaoning, Liu, Weizhen, Ma, Jiangang, Liu, Yichun
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 15.11.2018
• Subjects: Low power consumption; Multilevel storage; RRAM; Surface plasma treatment; Multilevel storage; Surface plasma treatment; RRAM; Low power consumption

•The HfO2−x based RRAMs exhibit high uniformity by Ar plasma.•The low-power multilevel memory is achieved by Ar plasma.•The reliable resistive switching behaviors depend on interface changes at Au/HfO2−x. We demonstrated an effective method of Ar surface plasma treatment (SPT) to improve the resisti...