On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate

• Published in: Crystals (Basel) Vol. 7; no. 5; p. 134
• Main Authors: Lin, Po-Jung, Tien, Ching-Ho, Wang, Tzu-Yu, Chen, Che-Lin, Ou, Sin-Liang, Chung, Bu-Chin, Wuu, Dong-Sing
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 12.05.2017
• Subjects: Aluminum nitride; Chemical vapor deposition; Compressive properties; Curvature; Decomposition; Discontinuity; Insertion; Mathematical analysis; Metalorganic chemical vapor deposition; Silicon substrates; Stability; Switching; Tensile stress

In this study, low-temperature (LT) and high-temperature (HT) AlN insertion layers (ILs) grown at 680 and 970 °C were integrated with 3.7-μm GaN-based heterostructure grown on 150-mm Si (111) substrates by metalorganic chemical vapor deposition. Under a V/III flow ratio of 1960, the GaN epilayer wit...