APA (7th ed.) Citation

Lin, P., Tien, C., Wang, T., Chen, C., Ou, S., Chung, B., & Wuu, D. (2017). On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate. Crystals (Basel), 7(5), 134. https://doi.org/10.3390/cryst7050134

Chicago Style (17th ed.) Citation

Lin, Po-Jung, Ching-Ho Tien, Tzu-Yu Wang, Che-Lin Chen, Sin-Liang Ou, Bu-Chin Chung, and Dong-Sing Wuu. "On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate." Crystals (Basel) 7, no. 5 (2017): 134. https://doi.org/10.3390/cryst7050134.

MLA (9th ed.) Citation

Lin, Po-Jung, et al. "On the Role of AlN Insertion Layer in Stress Control of GaN on 150-mm Si (111) Substrate." Crystals (Basel), vol. 7, no. 5, 2017, p. 134, https://doi.org/10.3390/cryst7050134.