High‐efficiency balanced power amplifier using miniaturized harmonics suppressed coupler
A novel balanced power amplifier (BPA) using compact coupler with rhombus resonators is presented. In this design, a new method is presented to analyze the proposed rhombus‐shaped resonator based on the LC equivalent circuit. A new class F power amplifier is designed to improve performances of the B...
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| Published in | International journal of RF and microwave computer-aided engineering Vol. 30; no. 8 |
|---|---|
| Main Authors | , , |
| Format | Journal Article |
| Language | English |
| Published |
Hoboken, USA
John Wiley & Sons, Inc
01.08.2020
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| Subjects | |
| Online Access | Get full text |
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| Abstract | A novel balanced power amplifier (BPA) using compact coupler with rhombus resonators is presented. In this design, a new method is presented to analyze the proposed rhombus‐shaped resonator based on the LC equivalent circuit. A new class F power amplifier is designed to improve performances of the BPA. The results show that the performance of the proposed BPA is improved by using the proposed harmonic suppressed coupler at the design structure. The designed BPA operates at 1.25 GHz and delivers 29 dB output power with a gain of 17.9 dB and drain efficiency (DE) of 65.2%. The presented BPA is realized using ATF‐34143 transistors in GaAs pHEMT technology and fabricated on the RT/Duroid 5880 substrate with a thickness of 31 mil. |
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| AbstractList | A novel balanced power amplifier (BPA) using compact coupler with rhombus resonators is presented. In this design, a new method is presented to analyze the proposed rhombus‐shaped resonator based on the LC equivalent circuit. A new class F power amplifier is designed to improve performances of the BPA. The results show that the performance of the proposed BPA is improved by using the proposed harmonic suppressed coupler at the design structure. The designed BPA operates at 1.25 GHz and delivers 29 dB output power with a gain of 17.9 dB and drain efficiency (DE) of 65.2%. The presented BPA is realized using ATF‐34143 transistors in GaAs pHEMT technology and fabricated on the RT/Duroid 5880 substrate with a thickness of 31 mil. |
| Author | Hookari, Mohsen Roshani, Sobhan Roshani, Saeed |
| Author_xml | – sequence: 1 givenname: Mohsen surname: Hookari fullname: Hookari, Mohsen organization: Islamic Azad University – sequence: 2 givenname: Saeed orcidid: 0000-0002-4024-2755 surname: Roshani fullname: Roshani, Saeed email: s_roshany@yahoo.com organization: Islamic Azad University – sequence: 3 givenname: Sobhan surname: Roshani fullname: Roshani, Sobhan organization: Islamic Azad University |
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| SubjectTerms | Amplifier design balanced power amplifier Circuit design coupler Couplers Design Equivalent circuits LC equivalent circuit Performance enhancement Power amplifiers resonator Resonators Substrates transfer function Transistors |
| Title | High‐efficiency balanced power amplifier using miniaturized harmonics suppressed coupler |
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