Cu doped NiO thin film photocathodes for enhanced PEC performance
The present report describes the fabrication of undoped NiO and Cu doped NiO based photocathodes synthesized by sol gel spin coating technique. Mott-Schottky, LSV and EIS measurements have been carried out to investigate the PEC properties of these photocathodes. 3% Cu doped NiO film exhibits the hi...
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| Published in | Superlattices and microstructures Vol. 159; p. 107050 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
01.11.2021
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| Subjects | |
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| Abstract | The present report describes the fabrication of undoped NiO and Cu doped NiO based photocathodes synthesized by sol gel spin coating technique. Mott-Schottky, LSV and EIS measurements have been carried out to investigate the PEC properties of these photocathodes. 3% Cu doped NiO film exhibits the highest PEC performance among all photocathodes. The p-type semiconducting nature of all thin film samples has been confirmed from the M-S plots. Also, the values of carrier density have been tuned from 1.18 × 1020 to 1.36 × 1020 cm−3 for undoped NiO and 3% Cu doped NiO thin films. VB CB levels of the as-prepared photocathodes have been calculated from absorption spectra. 3Cu:NiO exhibits a significantly higher photocurrent density of −6.97 mA/cm2 at −1.5 V vs. Ag/AgCl in 0.1M NaOH solution under UV illumination. The superior PEC performance is due to efficient charge transport and reduced recombination rate of the photogenerated electron-hole pairs. These findings demonstrate the potential of Cu doped NiO photocathodes in water splitting applications.
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•NiO and Cu doped NiO thi films fabrication was carried out via sol-gel, spin coating technique.•3Cu:NiO exhibited the highest photocurrent denisty of -6.97 mA/cm2 at -1.5V vs Ag/AgCl under UV light.•Carrier density of 1.36 x 1020 cm-3 was estimated for 3Cu:NiO from Mott-Schottky Analysis. |
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| AbstractList | The present report describes the fabrication of undoped NiO and Cu doped NiO based photocathodes synthesized by sol gel spin coating technique. Mott-Schottky, LSV and EIS measurements have been carried out to investigate the PEC properties of these photocathodes. 3% Cu doped NiO film exhibits the highest PEC performance among all photocathodes. The p-type semiconducting nature of all thin film samples has been confirmed from the M-S plots. Also, the values of carrier density have been tuned from 1.18 × 1020 to 1.36 × 1020 cm−3 for undoped NiO and 3% Cu doped NiO thin films. VB CB levels of the as-prepared photocathodes have been calculated from absorption spectra. 3Cu:NiO exhibits a significantly higher photocurrent density of −6.97 mA/cm2 at −1.5 V vs. Ag/AgCl in 0.1M NaOH solution under UV illumination. The superior PEC performance is due to efficient charge transport and reduced recombination rate of the photogenerated electron-hole pairs. These findings demonstrate the potential of Cu doped NiO photocathodes in water splitting applications.
[Display omitted]
•NiO and Cu doped NiO thi films fabrication was carried out via sol-gel, spin coating technique.•3Cu:NiO exhibited the highest photocurrent denisty of -6.97 mA/cm2 at -1.5V vs Ag/AgCl under UV light.•Carrier density of 1.36 x 1020 cm-3 was estimated for 3Cu:NiO from Mott-Schottky Analysis. |
| ArticleNumber | 107050 |
| Author | Thangavel, R. Sahoo, Pooja Sharma, Akash Padhan, Subash |
| Author_xml | – sequence: 1 givenname: Pooja surname: Sahoo fullname: Sahoo, Pooja organization: Department of Physics, Indian Institute of Technology (Indian School of Mines), Dhanbad, 826004, India – sequence: 2 givenname: Akash surname: Sharma fullname: Sharma, Akash organization: Department of Physics, Indian Institute of Technology (Indian School of Mines), Dhanbad, 826004, India – sequence: 3 givenname: Subash surname: Padhan fullname: Padhan, Subash organization: Department of Chemistry, Indian Institute of Technology (Indian School of Mines), Dhanbad, 826004, India – sequence: 4 givenname: R. surname: Thangavel fullname: Thangavel, R. email: rthangavel@iitism.ac.in organization: Department of Physics, Indian Institute of Technology (Indian School of Mines), Dhanbad, 826004, India |
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| Keywords | Sol-gel processes Water splitting Photocurrent density Cu doped NiO |
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| SubjectTerms | Cu doped NiO Photocurrent density Sol-gel processes Water splitting |
| Title | Cu doped NiO thin film photocathodes for enhanced PEC performance |
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