III-V/Si staggered heterojunction based source-pocket engineered vertical TFETs for low power applications

• Published in: Superlattices and microstructures Vol. 142; p. 106494
• Main Authors: Tripathy, Manas Ranjan, Singh, Ashish Kumar, Baral, Kamalaksha, Singh, Prince Kumar, Jit, Satyabrata
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2020
• Subjects: Band-to-band tunneling (BTBT); Heterojunction; Source pocket; Sub-threshold swing (SS); Tunnel field effect transistor (TFET); Source pocket; Sub-threshold swing (SS); Band-to-band tunneling (BTBT); Tunnel field effect transistor (TFET); Heterojunction

This article presents a comparative study on the performance characteristics of some vertical tunnel field effect transistor (TFET): conventional all-Si TFET with pocket, In0.53Ga0.47As/Si heterojunction TFET with pocket and GaSb/Si heterojunction TFET with pocket. Low band gap materials like In0.53...