Ion implantation induced phase transformation and enhanced crystallinity of as deposited copper oxide thin films by pulsed laser deposition
•Thin films of copper oxide deposited by pulsed laser deposition at 350°C.•Amorphous copper oxide transformed to crystalline Cu2O phase by low energy ion implantation.•Mixed copper oxide phases transformed to single phase of Cu2O by ion implantation.•Sheet resistance decreased with particle fluence....
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| Published in | Superlattices and microstructures Vol. 84; pp. 24 - 35 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
01.08.2015
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| Abstract | •Thin films of copper oxide deposited by pulsed laser deposition at 350°C.•Amorphous copper oxide transformed to crystalline Cu2O phase by low energy ion implantation.•Mixed copper oxide phases transformed to single phase of Cu2O by ion implantation.•Sheet resistance decreased with particle fluence.
Copper oxide thin film of about 260–280nm thickness was deposited using pulsed laser deposition (PLD) on glass substrate at 350°C and post depositional sample treatment was performed by ion implantation with 50keV N5+ ion beam with varying particle fluence. Amorphous copper oxide thin film deposited at 80mTorr partial pressure of oxygen was transformed to cubic Cu2O phase (20.2nm) when implanted at 1×1016particles/cm2. While mixed Cu2O and CuO phases in the thin film deposited at 100mTorr oxygen pressure was transformed to single phase of Cu2O (23.5nm), with enhanced crystallinity when implanted with 2.5×1015particles/cm2. The phase transformation and improved crystallinity is attributed to thermal effect owing to stopping of incident ion beam. Implantation with higher particle fluence led to transformation to CuO phase with reduced crystallite sized and the increased electrical conductivity. |
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| AbstractList | •Thin films of copper oxide deposited by pulsed laser deposition at 350°C.•Amorphous copper oxide transformed to crystalline Cu2O phase by low energy ion implantation.•Mixed copper oxide phases transformed to single phase of Cu2O by ion implantation.•Sheet resistance decreased with particle fluence.
Copper oxide thin film of about 260–280nm thickness was deposited using pulsed laser deposition (PLD) on glass substrate at 350°C and post depositional sample treatment was performed by ion implantation with 50keV N5+ ion beam with varying particle fluence. Amorphous copper oxide thin film deposited at 80mTorr partial pressure of oxygen was transformed to cubic Cu2O phase (20.2nm) when implanted at 1×1016particles/cm2. While mixed Cu2O and CuO phases in the thin film deposited at 100mTorr oxygen pressure was transformed to single phase of Cu2O (23.5nm), with enhanced crystallinity when implanted with 2.5×1015particles/cm2. The phase transformation and improved crystallinity is attributed to thermal effect owing to stopping of incident ion beam. Implantation with higher particle fluence led to transformation to CuO phase with reduced crystallite sized and the increased electrical conductivity. |
| Author | Menon, Ranjini Yadav, Kanhaiya Lal Krishna, J.B.M. Bind, Umesh Chandra Dutta, Raj Kumar Sekhon, Gurpreet Kaur Nabhiraj, P.Y. |
| Author_xml | – sequence: 1 givenname: Umesh Chandra surname: Bind fullname: Bind, Umesh Chandra organization: Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India – sequence: 2 givenname: Raj Kumar surname: Dutta fullname: Dutta, Raj Kumar email: duttafcy@iitr.ernet.in organization: Centre of Nanotechnology, Indian Institute of Technology Roorkee, Roorkee 247667, India – sequence: 3 givenname: Gurpreet Kaur surname: Sekhon fullname: Sekhon, Gurpreet Kaur organization: Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India – sequence: 4 givenname: Kanhaiya Lal surname: Yadav fullname: Yadav, Kanhaiya Lal organization: Department of Physics, Indian Institute of Technology Roorkee, Roorkee 247667, India – sequence: 5 givenname: J.B.M. surname: Krishna fullname: Krishna, J.B.M. organization: UGC-DAE-CSR, Kolkata Centre, LB-8/III, Bidhannagar, Kolkata 700091, India – sequence: 6 givenname: Ranjini surname: Menon fullname: Menon, Ranjini organization: Variable Energy Cyclotron Centre, AF/1, Bidhannagar, Kolkata 700064, India – sequence: 7 givenname: P.Y. surname: Nabhiraj fullname: Nabhiraj, P.Y. organization: Variable Energy Cyclotron Centre, AF/1, Bidhannagar, Kolkata 700064, India |
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| Title | Ion implantation induced phase transformation and enhanced crystallinity of as deposited copper oxide thin films by pulsed laser deposition |
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