Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si

• Published in: Materials science in semiconductor processing Vol. 115; p. 105104
• Main Authors: Niikura, Kenta, Yamahata, Natsuki, Hoshi, Yusuke, Takamura, Tsukasa, Saito, Kimihiko, Konagai, Makoto, Sawano, Kentarou
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 15.08.2020

We study influences of the Ge-on-Insulator (GOI) fabrication and its surface passivation by deposition of a hydrogenated amorphous Si (a-Si:H) layer on light emission properties from a strained Ge. It is shown that the GOI fabrication leads to drastic enhancements of room temperature photoluminescen...