Enhanced photoluminescence from strained Ge-on-Insulator surface-passivated with hydrogenated amorphous Si
We study influences of the Ge-on-Insulator (GOI) fabrication and its surface passivation by deposition of a hydrogenated amorphous Si (a-Si:H) layer on light emission properties from a strained Ge. It is shown that the GOI fabrication leads to drastic enhancements of room temperature photoluminescen...
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| Published in | Materials science in semiconductor processing Vol. 115; p. 105104 |
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| Main Authors | , , , , , , |
| Format | Journal Article |
| Language | English |
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Elsevier Ltd
15.08.2020
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| Abstract | We study influences of the Ge-on-Insulator (GOI) fabrication and its surface passivation by deposition of a hydrogenated amorphous Si (a-Si:H) layer on light emission properties from a strained Ge. It is shown that the GOI fabrication leads to drastic enhancements of room temperature photoluminescence (PL). One of the origins is elimination of a defective Ge layer inevitably formed due to strain-relaxation. We also find that the surface passivation with the a-Si:H layer can further enhance the PL intensity provided that the dopant type, p or n, of the a-Si:H matches that of the Ge. As a result, we obtain the PL intensity enhancements up to 15 times compared to as-grown Ge-on-Si, which indicates that the GOI surface-passivated with a-Si:H is a promising structure toward Ge-based high efficient light emitters on the Si platform. |
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| AbstractList | We study influences of the Ge-on-Insulator (GOI) fabrication and its surface passivation by deposition of a hydrogenated amorphous Si (a-Si:H) layer on light emission properties from a strained Ge. It is shown that the GOI fabrication leads to drastic enhancements of room temperature photoluminescence (PL). One of the origins is elimination of a defective Ge layer inevitably formed due to strain-relaxation. We also find that the surface passivation with the a-Si:H layer can further enhance the PL intensity provided that the dopant type, p or n, of the a-Si:H matches that of the Ge. As a result, we obtain the PL intensity enhancements up to 15 times compared to as-grown Ge-on-Si, which indicates that the GOI surface-passivated with a-Si:H is a promising structure toward Ge-based high efficient light emitters on the Si platform. |
| ArticleNumber | 105104 |
| Author | Takamura, Tsukasa Saito, Kimihiko Niikura, Kenta Hoshi, Yusuke Yamahata, Natsuki Konagai, Makoto Sawano, Kentarou |
| Author_xml | – sequence: 1 givenname: Kenta surname: Niikura fullname: Niikura, Kenta email: g1881253@gmail.com organization: Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan – sequence: 2 givenname: Natsuki surname: Yamahata fullname: Yamahata, Natsuki organization: Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan – sequence: 3 givenname: Yusuke surname: Hoshi fullname: Hoshi, Yusuke organization: Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan – sequence: 4 givenname: Tsukasa surname: Takamura fullname: Takamura, Tsukasa organization: Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan – sequence: 5 givenname: Kimihiko surname: Saito fullname: Saito, Kimihiko organization: Faculty of Symbiotic Systems Science, Fukushima University, 1 Kanayagawa, Fukushima, 960-1296, Japan – sequence: 6 givenname: Makoto surname: Konagai fullname: Konagai, Makoto organization: Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan – sequence: 7 givenname: Kentarou surname: Sawano fullname: Sawano, Kentarou email: sawano@tcu.ac.jp organization: Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan |
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| Cites_doi | 10.1364/OE.20.011316 10.1038/nenergy.2017.32 10.1109/JPHOTOV.2013.2282737 10.1364/OE.25.006550 10.1063/1.3662404 10.1364/OL.35.000679 10.1063/1.4798292 10.1364/OE.23.014815 10.1002/pssa.201700293 10.1088/0268-1242/31/4/043002 10.1063/1.4862890 10.7567/JJAP.57.010101 10.1016/j.tsf.2015.11.020 10.1364/OE.22.000399 10.1038/nphoton.2013.67 10.1038/nphoton.2012.111 10.1109/JPHOTOV.2014.2320586 10.1109/JPHOTOV.2014.2358377 10.1007/s11708-016-0434-6 |
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