Suppression of ambipolar current in tunnel FETs using drain-pocket: Proposal and analysis

• Published in: Superlattices and microstructures Vol. 113; pp. 261 - 270
• Main Authors: Garg, Shelly, Saurabh, Sneh
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.01.2018
• Subjects: Ambipolar current; BTBT; Drain pocket; TFET; Tunneling barrier width; Drain pocket; Ambipolar current; BTBT; Tunneling barrier width; TFET

In this paper, we investigate the impact of a drain-pocket (DP) adjacent to the drain region in Tunnel Field-Effect Transistors (TFETs) to effectively suppress the ambipolar current. Using calibrated two-dimensional device simulation, we examine the impact of DP in Double Gate TFET (DGTFET). We demo...