Numerical analysis of Mg2Si/Si heterojunction DG-TFET for low power/high performance applications: Impact of non- idealities

• Published in: Superlattices and microstructures Vol. 139; p. 106397
• Main Authors: Madan, Jaya, Dassi, Minaxi, Pandey, Rahul, Chaujar, Rishu, Sharma, Rajnish
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.03.2020
• Subjects: Band to band tunneling; Bulk defects; DG-TFET; Magnesium silicide; Staggered type heterojunction; Tunnel FET; DG-TFET; Staggered type heterojunction; Tunnel FET; Magnesium silicide; Band to band tunneling; Bulk defects
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2020.106397

In the advanced technology nodes, conventional MOSFETs are being replaced by tunnel field effect transistors (TFETs), due to its potential of achieving subthreshold swing (SS) less than 60 mV/decade. However, certain constraints are to be met to improve the performance of TFET in terms of higher ON...