Comprehensive review on electrical noise analysis of TFET structures

Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for conventional CMOS due to their advantages like very low leakage current and steep sub-threshold slope. In semiconductor devices, noise is considered an undesired signal that can deteriorate the desired signal. In TFET struct...

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Bibliographic Details
Published inSuperlattices and microstructures Vol. 161; p. 107101
Main Authors Chander, Sweta, Sinha, Sanjeet Kumar, Chaudhary, Rekha
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.01.2022
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