Comprehensive review on electrical noise analysis of TFET structures
Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for conventional CMOS due to their advantages like very low leakage current and steep sub-threshold slope. In semiconductor devices, noise is considered an undesired signal that can deteriorate the desired signal. In TFET struct...
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Published in | Superlattices and microstructures Vol. 161; p. 107101 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Elsevier Ltd
01.01.2022
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Subjects | |
Online Access | Get full text |
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