Heavy ion radiation and temperature effects on SiC schottky barrier diode
The function of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in an environment of extreme temperature and radiation was assessed. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the devices were measured by heavy ions (HIs) irradiation at 3 different fluences...
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| Published in | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Vol. 491; pp. 52 - 58 |
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| Main Authors | , , , , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
15.03.2021
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| Online Access | Get full text |
| ISSN | 0168-583X 1872-9584 |
| DOI | 10.1016/j.nimb.2021.01.019 |
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| Abstract | The function of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in an environment of extreme temperature and radiation was assessed. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the devices were measured by heavy ions (HIs) irradiation at 3 different fluences and 15 different nodes of temperature. From these measurements, the effective carrier concentration (ND), reverse current (IR), series resistance (RS), ideal factor (n), and Schottky barrier height (SBH) were calculated and analyzed. Obvious increases of ND and IR were found and some changes of the electronic characteristics with temperature were enhanced by HIs. After the highest fluence of irradiation, the IR at low temperature (20 K) was even larger than the IR at room temperature, which was subjected to lower fluence of irradiation, suggesting risks for aerospace applications. These changes were attributed to defects both at the interface and in the body-substrate induced by irradiation. |
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| AbstractList | The function of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in an environment of extreme temperature and radiation was assessed. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the devices were measured by heavy ions (HIs) irradiation at 3 different fluences and 15 different nodes of temperature. From these measurements, the effective carrier concentration (ND), reverse current (IR), series resistance (RS), ideal factor (n), and Schottky barrier height (SBH) were calculated and analyzed. Obvious increases of ND and IR were found and some changes of the electronic characteristics with temperature were enhanced by HIs. After the highest fluence of irradiation, the IR at low temperature (20 K) was even larger than the IR at room temperature, which was subjected to lower fluence of irradiation, suggesting risks for aerospace applications. These changes were attributed to defects both at the interface and in the body-substrate induced by irradiation. |
| Author | Yang, Zhimei Yu, Qingkui Hu, Rongbin Wang, Duowei Li, Yun Gong, Min Chen, Gang Tang, Changqin Cao, Shuang Huang, Mingmin Ma, Yao |
| Author_xml | – sequence: 1 givenname: Duowei surname: Wang fullname: Wang, Duowei organization: Key Laboratory for Microelectronics, College of Physics, Sichuan University, Chengdu 610064, China – sequence: 2 givenname: Rongbin surname: Hu fullname: Hu, Rongbin organization: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China – sequence: 3 givenname: Gang surname: Chen fullname: Chen, Gang organization: Science and Technology on Analog Integrated Circuit Laboratory, Chongqing 400060, China – sequence: 4 givenname: Changqin surname: Tang fullname: Tang, Changqin organization: Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064, China – sequence: 5 givenname: Yao surname: Ma fullname: Ma, Yao organization: Key Laboratory for Microelectronics, College of Physics, Sichuan University, Chengdu 610064, China – sequence: 6 givenname: Min surname: Gong fullname: Gong, Min organization: Key Laboratory for Microelectronics, College of Physics, Sichuan University, Chengdu 610064, China – sequence: 7 givenname: Qingkui surname: Yu fullname: Yu, Qingkui organization: China Academy of Space Technology, Beijing 100029, China – sequence: 8 givenname: Shuang surname: Cao fullname: Cao, Shuang organization: China Academy of Space Technology, Beijing 100029, China – sequence: 9 givenname: Yun surname: Li fullname: Li, Yun organization: Key Laboratory for Microelectronics, College of Physics, Sichuan University, Chengdu 610064, China – sequence: 10 givenname: Mingmin surname: Huang fullname: Huang, Mingmin organization: Key Laboratory for Microelectronics, College of Physics, Sichuan University, Chengdu 610064, China – sequence: 11 givenname: Zhimei surname: Yang fullname: Yang, Zhimei email: yangzhimei@scu.edu.cn organization: Key Laboratory for Microelectronics, College of Physics, Sichuan University, Chengdu 610064, China |
| BookMark | eNp9kMFKAzEQhoNUsK2-gKe8wK7JZrNNwIsUtYWCBxW8hWwywdR2tySxsG_vxnry0GFgBma-Yf5_hiZd3wFCt5SUlNDmblt2ft-WFaloSXLKCzSlYlEVkot6gqbjkii4YB9XaBbjlozBGZ-i9Qr0ccC-73DQ1uuUO91ZnGB_gKDTdwAMzoFJEY-jV7_E0Xz2KX0NuNUheAjY-t7CNbp0ehfh5q_O0fvT49tyVWxentfLh01hGCGpENaKihKQpm7atjGV5ESLBrhkDghr3KKuay1oTW0lrbRjb3RrWw7gmGCSzZE43TWhjzGAU8an379T0H6nKFHZErVV2RKVLVEkZ0arf-gh-L0Ow3no_gTBKOo4ylXReOgMWB9GV5Tt_Tn8B0LvfZg |
| CitedBy_id | crossref_primary_10_1109_TNS_2022_3160181 crossref_primary_10_1016_j_nimb_2024_165319 crossref_primary_10_1016_j_micrna_2022_207216 crossref_primary_10_1016_j_nimb_2023_04_028 crossref_primary_10_1016_j_micrna_2024_207945 crossref_primary_10_7498_aps_70_20210675 crossref_primary_10_1016_j_mssp_2024_109121 crossref_primary_10_3390_electronics12092133 |
| Cites_doi | 10.1016/j.nimb.2009.12.019 10.1016/j.jnucmat.2014.08.057 10.1016/j.mssp.2016.04.012 10.1063/1.370520 10.1109/TNS.2013.2243469 10.1002/pssa.201700555 10.1016/j.nimb.2015.06.006 10.1063/1.97359 10.1088/0268-1242/31/11/115002 10.1016/j.nimb.2015.09.084 10.1016/j.apsusc.2007.11.014 10.1016/j.nimb.2015.07.019 10.1063/1.5019310 10.1016/j.nimb.2015.12.029 10.1016/j.nimb.2017.07.030 10.1007/s11664-003-0128-9 10.1016/j.physb.2005.12.093 10.1063/1.2355547 10.1063/1.1477256 10.1016/j.microrel.2014.07.081 10.1016/j.mssp.2015.04.031 10.1016/j.microrel.2005.10.013 10.1016/j.nimb.2018.01.002 |
| ContentType | Journal Article |
| Copyright | 2021 Elsevier B.V. |
| Copyright_xml | – notice: 2021 Elsevier B.V. |
| DBID | AAYXX CITATION |
| DOI | 10.1016/j.nimb.2021.01.019 |
| DatabaseName | CrossRef |
| DatabaseTitle | CrossRef |
| DatabaseTitleList | |
| DeliveryMethod | fulltext_linktorsrc |
| Discipline | Physics |
| EISSN | 1872-9584 |
| EndPage | 58 |
| ExternalDocumentID | 10_1016_j_nimb_2021_01_019 S0168583X21000495 |
| GroupedDBID | --K --M -~X .~1 0R~ 123 1B1 1RT 1~. 1~5 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AABXZ AACTN AAEDW AAEPC AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AAXUO ABMAC ABNEU ABXRA ABYKQ ACDAQ ACFVG ACGFS ACRLP ADEZE AEBSH AEKER AEZYN AFKWA AFRZQ AFTJW AGUBO AGYEJ AHHHB AIEXJ AIKHN AITUG AIVDX AJOXV ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BKOJK BLXMC CS3 EBS EFJIC EFLBG EO8 EO9 EP2 EP3 F5P FDB FIRID FNPLU FYGXN G-Q GBLVA IHE J1W KOM LZ4 M41 MAGPM MO0 N9A O-L O9- OAUVE OZT P-8 P-9 P2P PC. Q38 RNS ROL RPZ SDF SDG SDP SES SPC SPCBC SPD SSM SSQ T5K TN5 ~02 ~G- 29N 3O- 53G 6TJ 8WZ A6W AAEDT AAQXK AATTM AAXKI AAYWO AAYXX ABFNM ABWVN ABXDB ACNNM ACRPL ADMUD ADNMO AEIPS AFFNX AFJKZ AGCQF AGHFR AGQPQ AGRNS AIIUN ANKPU APXCP ASPBG AVWKF AZFZN BNPGV CITATION EJD FEDTE FGOYB G-2 HME HVGLF HZ~ H~9 MVM R2- RIG SEW SHN SSH SSZ VOH WUQ |
| ID | FETCH-LOGICAL-c300t-8dd8210e9c46bb6c2950a86e593fe036f7444a8141d29d9d4a8cabdb5eef38393 |
| IEDL.DBID | .~1 |
| ISSN | 0168-583X |
| IngestDate | Thu Apr 24 23:12:53 EDT 2025 Tue Jul 01 02:12:39 EDT 2025 Fri Feb 23 02:48:18 EST 2024 |
| IsPeerReviewed | true |
| IsScholarly | true |
| Keywords | Commercial device Irradiation Temperature dependence SiC schottky barrier diode Heavy Ions |
| Language | English |
| LinkModel | DirectLink |
| MergedId | FETCHMERGED-LOGICAL-c300t-8dd8210e9c46bb6c2950a86e593fe036f7444a8141d29d9d4a8cabdb5eef38393 |
| PageCount | 7 |
| ParticipantIDs | crossref_citationtrail_10_1016_j_nimb_2021_01_019 crossref_primary_10_1016_j_nimb_2021_01_019 elsevier_sciencedirect_doi_10_1016_j_nimb_2021_01_019 |
| ProviderPackageCode | CITATION AAYXX |
| PublicationCentury | 2000 |
| PublicationDate | 2021-03-15 |
| PublicationDateYYYYMMDD | 2021-03-15 |
| PublicationDate_xml | – month: 03 year: 2021 text: 2021-03-15 day: 15 |
| PublicationDecade | 2020 |
| PublicationTitle | Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms |
| PublicationYear | 2021 |
| Publisher | Elsevier B.V |
| Publisher_xml | – name: Elsevier B.V |
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| SSID | ssj0000535 |
| Score | 2.3664894 |
| Snippet | The function of a commercial Schottky Barrier Diode (SBD) based on 4H-SiC in an environment of extreme temperature and radiation was assessed. The... |
| SourceID | crossref elsevier |
| SourceType | Enrichment Source Index Database Publisher |
| StartPage | 52 |
| SubjectTerms | Commercial device Heavy Ions Irradiation SiC schottky barrier diode Temperature dependence |
| Title | Heavy ion radiation and temperature effects on SiC schottky barrier diode |
| URI | https://dx.doi.org/10.1016/j.nimb.2021.01.019 |
| Volume | 491 |
| hasFullText | 1 |
| inHoldings | 1 |
| isFullTextHit | |
| isPrint | |
| link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV3JasMwEBUhpdBL6UrTJejQW3ET2ZItHUNoSFqaSxrIzWgzuIsTUreQS7-9GlvpAiWHgg_eBuwnMTNCb94gdGlETG3CdBBTwwOqEhWITEWBzlx0SLi2GYFC4ftxPJzS2xmbNVB_XQsDtErv-2ufXnlrf6fj0ews8rwzcckKZzyahaTKc6HQHNTr3Jy-_vimeYB-Sa3vXVUYzXzhTM3xKvIX5daIIamkO0Ft56_g9CPgDPbQrs8Uca_-mH3UsMUB2q4Ym_r1EI2GVr6vsIMVL0FfAADGsjAYxKa8UjL2bA3sHk3yPoaVbFk-rbCSS-hUh00-N_YITQc3D_1h4PsiBDrqdsuAG8PdT1uhaaxUrEPBupLHlokosy4iZQmlVHJCiQmFEcada6mMYtZmbkEqomPULOaFPUFYOv9CTSSZkMQNFlFchNCyU-hqg1S3EFkDkmovGg69K57TNTvsMQUQUwAx7cIhWujqy2ZRS2ZsfJutcU5_DXzqfPoGu9N_2p2hHbgCGhlh56hZLt_shcsrStWuJk4bbfVGd8PxJ1GlzCA |
| linkProvider | Elsevier |
| linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1JS8NAFH5oRfQirljXOXiT0E4yk8wcpVhSl15sobcwWyAuaalR8N87k0xdQHoQcgiZPEi-CW8h3_sewIXmMTEJVUFMNAuITGTAcxkFKrfRIWHK5Ng1Ct8P43RMbiZ0sgK9RS-Mo1V639_49Npb-ysdj2ZnVhSdB5usMMqiSYjrPJeuwppTpyItWLsa3KbDb4dMmzmbuGkymvjemYbmVRYv0paJIa7VO53gzl_x6UfM6W_Dlk8W0VXzPDuwYspdWK9Jm-p1DwapEe8fyCKL5k5iwGGMRKmR05vyYsnIEzaQXXooesgVs1X19IGkmLthdUgXU232Ydy_HvXSwI9GCFTU7VYB05rZ9zZckVjKWIWcdgWLDeVRbmxQyhNCiGCYYB1yzbU9V0JqSY3JbU3KowNoldPSHAIS1sUQHQnKBbb7hSXjoZvayVX9j1S1AS8AyZTXDXfjK56zBUHsMXMgZg7ErOsO3obLL5tZo5qx9G66wDn7tfeZdetL7I7-aXcOG-no_i67Gwxvj2HTrThWGaYn0Krmb-bUphmVPPOf0Sdmq87R |
| openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Heavy+ion+radiation+and+temperature+effects+on+SiC+schottky+barrier+diode&rft.jtitle=Nuclear+instruments+%26+methods+in+physics+research.+Section+B%2C+Beam+interactions+with+materials+and+atoms&rft.au=Wang%2C+Duowei&rft.au=Hu%2C+Rongbin&rft.au=Chen%2C+Gang&rft.au=Tang%2C+Changqin&rft.date=2021-03-15&rft.pub=Elsevier+B.V&rft.issn=0168-583X&rft.eissn=1872-9584&rft.volume=491&rft.spage=52&rft.epage=58&rft_id=info:doi/10.1016%2Fj.nimb.2021.01.019&rft.externalDocID=S0168583X21000495 |
| thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0168-583X&client=summon |
| thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0168-583X&client=summon |
| thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0168-583X&client=summon |