Nonlinear and linear conductance modulation and synaptic plasticity in stable tin-zinc oxide based-memristor for neuro-inspired computing

• Published in: Materials science in semiconductor processing Vol. 186; p. 109111
• Main Authors: Rajwali Khan, Shahid Iqbal, Fazal Raziq, Maram, Pardha Saradhi, Chakrabortty, Sabyasachi, Sangaraju, Sambasivam
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.02.2025
• Subjects: Artificial synapses; Bipolar resistive switching; Data retention; Endurance; Memristors; Oxygen vacancies; Oxygen vacancies; Endurance; Bipolar resistive switching; Data retention; Artificial synapses; Memristors

Inducing post-transition metals in an oxide semiconductor system has a high potential for use in storage for neuromorphic computing. It is challenging to find a material that can be switched stably between multiple resistance states. This research explores the memristive properties of Sn (post-trans...