APA (7th ed.) Citation

Khan, R., Iqbal, S., Raziq, F., Maram, P. S., Chakrabortty, S., & Sangaraju, S. (2025). Nonlinear and linear conductance modulation and synaptic plasticity in stable tin-zinc oxide based-memristor for neuro-inspired computing. Materials science in semiconductor processing, 186, 109111. https://doi.org/10.1016/j.mssp.2024.109111

Chicago Style (17th ed.) Citation

Khan, Rajwali, Shahid Iqbal, Fazal Raziq, Pardha Saradhi Maram, Sabyasachi Chakrabortty, and Sambasivam Sangaraju. "Nonlinear and Linear Conductance Modulation and Synaptic Plasticity in Stable Tin-zinc Oxide Based-memristor for Neuro-inspired Computing." Materials Science in Semiconductor Processing 186 (2025): 109111. https://doi.org/10.1016/j.mssp.2024.109111.

MLA (9th ed.) Citation

Khan, Rajwali, et al. "Nonlinear and Linear Conductance Modulation and Synaptic Plasticity in Stable Tin-zinc Oxide Based-memristor for Neuro-inspired Computing." Materials Science in Semiconductor Processing, vol. 186, 2025, p. 109111, https://doi.org/10.1016/j.mssp.2024.109111.