APA (7th ed.) Citation

Tsai, M., Shih, C., Chang, C., Chu, Y., Wu, Y., & Huang, C. (2022). Resistive switching properties of Mn-doped amorphous Nb2O5 thin films for resistive RAM application. Materials science in semiconductor processing, 152, 107059. https://doi.org/10.1016/j.mssp.2022.107059

Chicago Style (17th ed.) Citation

Tsai, Meng-Hung, Chia-Jung Shih, Che-Wei Chang, Yu-Tseng Chu, You-Shen Wu, and Cheng-Liang Huang. "Resistive Switching Properties of Mn-doped Amorphous Nb2O5 Thin Films for Resistive RAM Application." Materials Science in Semiconductor Processing 152 (2022): 107059. https://doi.org/10.1016/j.mssp.2022.107059.

MLA (9th ed.) Citation

Tsai, Meng-Hung, et al. "Resistive Switching Properties of Mn-doped Amorphous Nb2O5 Thin Films for Resistive RAM Application." Materials Science in Semiconductor Processing, vol. 152, 2022, p. 107059, https://doi.org/10.1016/j.mssp.2022.107059.