Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in AlxGa1-xN waveguide
AlGaN based Nanowire laser diodes (NW-LDs) grown on sapphire substrates have strong polarization induced electric field. Such electric field has the ability to degrade the optoelectronic characteristics of deep ultraviolet (DUV) NW-LD. In this work, a graded AlN composition AlxGa1-xN waveguide (WG)...
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| Published in | Superlattices and microstructures Vol. 145; p. 106643 |
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| Main Authors | , , , , , |
| Format | Journal Article |
| Language | English |
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01.09.2020
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| ISSN | 0749-6036 1096-3677 |
| DOI | 10.1016/j.spmi.2020.106643 |
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| Abstract | AlGaN based Nanowire laser diodes (NW-LDs) grown on sapphire substrates have strong polarization induced electric field. Such electric field has the ability to degrade the optoelectronic characteristics of deep ultraviolet (DUV) NW-LD. In this work, a graded AlN composition AlxGa1-xN waveguide (WG) layer is used for the enhancement of DUV NW-LD performance. Grading of WG induces bulk polarization charges which compensates the effect of polarization induced electric field. According to the calculated optoelectronic characteristics of NW-LD, it is found that grading of n-type WG (n-WG) increases the optical confinement factor (OCF) by 82%. Fortunately, the proposed graded n-WG structure suppresses the leakage of optical field from active region and enhances carrier injection efficiency. Furthermore, if both n-WG and p-WG graded layers are used, the improvement is not obvious because of the current leakage from graded p-WG. Thus, graded n-WG based NW-LD gives highest 33.5% OCF with the lowest 7 mA and 4.59 V threshold current and voltage respectively.
•WG grading induces bulk polarization charge, which suppresses the field leakage from active media.•Grading of n-type WG (n-WG) increases the optical confinement factor (OCF).•As compared to the step graded WG and double graded WG structure, a single only graded n-WG NW-LD structure provides better performance. |
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| AbstractList | AlGaN based Nanowire laser diodes (NW-LDs) grown on sapphire substrates have strong polarization induced electric field. Such electric field has the ability to degrade the optoelectronic characteristics of deep ultraviolet (DUV) NW-LD. In this work, a graded AlN composition AlxGa1-xN waveguide (WG) layer is used for the enhancement of DUV NW-LD performance. Grading of WG induces bulk polarization charges which compensates the effect of polarization induced electric field. According to the calculated optoelectronic characteristics of NW-LD, it is found that grading of n-type WG (n-WG) increases the optical confinement factor (OCF) by 82%. Fortunately, the proposed graded n-WG structure suppresses the leakage of optical field from active region and enhances carrier injection efficiency. Furthermore, if both n-WG and p-WG graded layers are used, the improvement is not obvious because of the current leakage from graded p-WG. Thus, graded n-WG based NW-LD gives highest 33.5% OCF with the lowest 7 mA and 4.59 V threshold current and voltage respectively.
•WG grading induces bulk polarization charge, which suppresses the field leakage from active media.•Grading of n-type WG (n-WG) increases the optical confinement factor (OCF).•As compared to the step graded WG and double graded WG structure, a single only graded n-WG NW-LD structure provides better performance. |
| ArticleNumber | 106643 |
| Author | Niass, Mussaab Ibrahim Xing, Zhongqiu Liu, Yuhuai Nawaz, Sharif Muhammad Wang, Fang Wang, Yifu |
| Author_xml | – sequence: 1 givenname: Sharif Muhammad surname: Nawaz fullname: Nawaz, Sharif Muhammad email: nawazkhattak@gs.zzu.edu.com organization: National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, and Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China – sequence: 2 givenname: Mussaab Ibrahim surname: Niass fullname: Niass, Mussaab Ibrahim organization: National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, and Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China – sequence: 3 givenname: Yifu surname: Wang fullname: Wang, Yifu organization: National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, and Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China – sequence: 4 givenname: Zhongqiu surname: Xing fullname: Xing, Zhongqiu organization: National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, and Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China – sequence: 5 givenname: Fang surname: Wang fullname: Wang, Fang email: iefwang@zzu.edu.cn organization: National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, and Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China – sequence: 6 givenname: Yuhuai surname: Liu fullname: Liu, Yuhuai email: ieyhliu@zzu.edu.cn organization: National Center for International Joint Research of Electronic Materials and Systems, International Joint-Laboratory of Electronic Materials and Systems of Henan Province, and Henan Key Laboratory of Laser and Opto-electric Information Technology, School of Information Engineering, Zhengzhou University, Zhengzhou, Henan 450001, P. R. China |
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| Snippet | AlGaN based Nanowire laser diodes (NW-LDs) grown on sapphire substrates have strong polarization induced electric field. Such electric field has the ability to... |
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| SubjectTerms | AlN Composition grading Induced bulk polarization Nanowire laser diodes Optical confinement factor Waveguide |
| Title | Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in AlxGa1-xN waveguide |
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