Analytical modeling and simulation analysis of T-shaped III-V heterojunction vertical T-FET

• Published in: Superlattices and microstructures Vol. 147; p. 106717
• Main Authors: Singh, Shailendra, Raj, Balwinder
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2020
• Subjects: 2-D Poisson equation; Analytical modelling; Band 2 band tunneling (B2BT); Electric field; Kane model; Mobile charge; Subthreshold slope (SS); Vertical T-shaped tunneling filed effect transistor (V-TTFET); Kane model; Electric field; Band 2 band tunneling (B2BT); Vertical T-shaped tunneling filed effect transistor (V-TTFET); Analytical modelling; Subthreshold slope (SS); Mobile charge; 2-D Poisson equation

In this paper, we have developed a new 2D compact analytical model for surface potential and drain current for III-V group heterojunction of T-shaped Vertical Tunneling FET with inherited properties of dual modulation effect. The device's surface potential is determined from the compact model,...