Effect of annealing temperature on β-Ga2O3 thin films deposited by RF sputtering method

• Published in: Superlattices and microstructures Vol. 156; p. 106976
• Main Authors: Singh, Amit Kumar, Gupta, Mukul, Sathe, V., Katharria, Y.S.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2021
• Subjects: Optical study; RF Sputtering method; β-Ga2O3 thin films; β-Ga2O3 thin films; RF Sputtering method; Optical study

In this work, Gallium oxide (Ga2O3) films were deposited by RF magnetron sputtering on quartz and n-type Si (100) substrates at room temperature. The effect of annealing temperature on crystalline structure and band gap of β-Ga2O3 thin films were investigated in detail. X-ray diffraction revealed th...