APA (7th ed.) Citation

Wang, T., Meng, J., Li, Q., Chen, L., Zhu, H., Sun, Q., . . . Zhang, D. W. (2021). Forming-free flexible memristor with multilevel storage for neuromorphic computing by full PVD technique. Journal of materials science & technology, 60, 21-26. https://doi.org/10.1016/j.jmst.2020.04.059

Chicago Style (17th ed.) Citation

Wang, Tian-Yu, Jia-Lin Meng, Qing-Xuan Li, Lin Chen, Hao Zhu, Qing-Qing Sun, Shi-Jin Ding, and David Wei Zhang. "Forming-free Flexible Memristor with Multilevel Storage for Neuromorphic Computing by Full PVD Technique." Journal of Materials Science & Technology 60 (2021): 21-26. https://doi.org/10.1016/j.jmst.2020.04.059.

MLA (9th ed.) Citation

Wang, Tian-Yu, et al. "Forming-free Flexible Memristor with Multilevel Storage for Neuromorphic Computing by Full PVD Technique." Journal of Materials Science & Technology, vol. 60, 2021, pp. 21-26, https://doi.org/10.1016/j.jmst.2020.04.059.

Warning: These citations may not always be 100% accurate.