Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement

• Published in: Superlattices and microstructures Vol. 94; pp. 138 - 146
• Main Authors: Raad, Bhagwan Ram, Nigam, Kaushal, Sharma, Dheeraj, Kondekar, P.N.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2016
• Subjects: Band to band tunneling (BTBT); Bandgap engineering; Gate dielectric engineering; Gate material work function engineering; Bandgap engineering; Gate dielectric engineering; Gate material work function engineering; Band to band tunneling (BTBT)

This script features a study of bandgap, gate material work function and gate dielectric engineering for enhancement of DC and Analog/RF performance, reduction in the hot carriers effect (HCEs) and drain induced barrier lowering (DIBL) for better device reliability. In this concern, the use of band...