Raad, B. R., Nigam, K., Sharma, D., & Kondekar, P. (2016). Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement. Superlattices and microstructures, 94, 138-146. https://doi.org/10.1016/j.spmi.2016.04.016
Chicago Style (17th ed.) CitationRaad, Bhagwan Ram, Kaushal Nigam, Dheeraj Sharma, and P.N Kondekar. "Performance Investigation of Bandgap, Gate Material Work Function and Gate Dielectric Engineered TFET with Device Reliability Improvement." Superlattices and Microstructures 94 (2016): 138-146. https://doi.org/10.1016/j.spmi.2016.04.016.
MLA (9th ed.) CitationRaad, Bhagwan Ram, et al. "Performance Investigation of Bandgap, Gate Material Work Function and Gate Dielectric Engineered TFET with Device Reliability Improvement." Superlattices and Microstructures, vol. 94, 2016, pp. 138-146, https://doi.org/10.1016/j.spmi.2016.04.016.