Analysis of the conduction mechanisms responsible for multilevel bipolar resistive switching of SiO2/Si multilayer structures

• Published in: Superlattices and microstructures Vol. 137; p. 106347
• Main Authors: González-Flores, K.E., Horley, P., Cabañas-Tay, S.A., Pérez-García, S.A., Licea-Jiménez, L., Palacios-Huerta, L., Aceves-Mijares, M., Moreno-Moreno, M., Morales-Sánchez, A.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.01.2020
• Subjects: Bipolar resistive switching; Multilayer structures; Si-nanocrystals; Silicon rich oxide; Si-nanocrystals; Silicon rich oxide; Bipolar resistive switching; Multilayer structures

We report on the bipolar resistive switching behavior of a SiO2/Si multilayer (ML) structure measured without current compliance for non-volatile memory applications. The SiO2/Si ML structure was thermally annealed to induce the formation of Si nanocrystals, which act as conductive nodes. It was fou...