Effect of ionized impurities at heterointerface on concentration and mobility of two-dimensional electrons in selectively doped heterojunction structures
The concentration N S and the low-temperature mobility µ of two-dimensional electron gas in GaAs/AlGaAs selectively doped heterojunctions have been studied theoretically and experimentally for the case where ionized impurities are present at heterointerfaces. It is found that N S scarcely changes wh...
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Published in | Japanese Journal of Applied Physics Vol. 33; no. 9A; pp. 4859 - 4862 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
Japanese journal of applied physics
1994
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Subjects | |
Online Access | Get full text |
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