A linearity based comparison between symmetric and asymmetric lateral diffusion for a 22 nm Underlapped DG-MOSFET

• Published in: Superlattices and microstructures Vol. 107; pp. 69 - 82
• Main Authors: Chattopadhyay, Ankush, Das, Rahul, Dasgupta, Arpan, Kundu, Atanu, Sarkar, Chandan K.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.07.2017
• Subjects: Analog and RF analysis; Asymmetric straggle architecture; Gatestack; GBW; Lateral straggle; Non quasi static; Underlap; Analog and RF analysis; Underlap; Lateral straggle; Non quasi static; Asymmetric straggle architecture; GBW; Gatestack
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2017.03.056

The paper presents a comparative study between symmetric and asymmetric straggle architecture, where asymmetric nature is observed by considering straggle in source and drain side alternatively by using the data obtained from 2D numerical simulator Sentaurus TCAD. The analog parameters such as the transconductance (gm), the gain per unit current (gm/Ids)and the intrinsic gain (gmRo) has been analyzed. RF parameters such as intrinsic gate to source and gate to drain capacitances Cgs and Cgd, intrinsic gate to source and gate to drain resistances Rgs and Rgd, the transport delay τm, the unity gain cut off frequency (fT) and the maximum frequency of oscillation (fmax) are also computed using the Non Quasi Static(NQS) approach. The RF feasibility has also been scrutinized with the help of linearity analysis and Harmonic Distortion (HD). The Second and Third order HD (HD2 and HD3) and Total HD(THD) have been analyzed to evaluate distortion performance. The circuit performance is also analyzed by using the devices as a driver MOSFET in a single stage amplifier circuit whose dc performance as well as small signal gain is evaluated and Gain Bandwidth Product (GBW) is also calculated in this paper. •Subthreshold Analog/RF Performance of Underlap DG-MOSFET for different Lateral diffusion architectures.•Extraction of AC small signal parameters of Underlap on Underlap DG-MOSFET for different lateral diffusion architectures.•RF parameters extraction using the Non Quasi Static (NQS) model of the Underlap DG-MOSFET for different lateral diffusion architectures.•Single stage amplifier analysis of the Underlap DG-MOSFET for different lateral diffusion architectures.•Linearity and Harmonic distortion analysis of the Underlap DG-MOSFET for different lateral diffusion architectures.