On the One-Dimensional Current Driven Semiconductor Equations

• Published in: SIAM journal on applied mathematics Vol. 51; no. 3; pp. 748 - 774
• Main Author: Kerkhoven, Thomas
• Format: Journal Article
• Language: English
• Published: Philadelphia, PA Society for Industrial and Applied Mathematics 01.06.1991
• Subjects: A priori knowledge; Boundary conditions; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conduction electrons; Contact potentials; Continuity equations; Doping; Electric current; Electronic transport in condensed matter; Electrons; Equilibrium; Exact sciences and technology; Ordinary differential equations; Physics; Semiconductors; Simulation; Theory of electronic transport; scattering mechanisms; Uniqueness; Transport process; Unipolar; Semiconductor materials; Differential equation; Charge carrier recombination; One dimensional model; Theoretical study; Charge carrier generation; Equation; Equation resolution; Boundary condition

The steady state semiconductor equations in one dimension are examined subject to a given current through the device, supplemented by Dirichlet boundary conditions on one end of the device. Solutions to this current driven model are identified as the fixed points of a mapping T, and uniqueness of so...