Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

• Published in: Superlattices and microstructures Vol. 111; pp. 103 - 114
• Main Authors: Aghandeh, Hadi, Sedigh Ziabari, Seyed Ali
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.11.2017
• Subjects: Ambipolar current; Gaussian doping; Heterostructure; Junctionless tunnel field-effect transistor; Heterostructure; Gaussian doping; Junctionless tunnel field-effect transistor; Ambipolar current

This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source inter...