Multi-layered nanostructure Bi2Se3 grown by chemical vapor deposition in selenium-rich atmosphere
•The multi-layered nanostructured Bi2Se3 were prepared by CVD using the high purity Se and Bi2Se3 powder as source materials to decrease the Se vacancies in the products.•The wide nanoribbons grown along the [1 1 2¯ 0] direction were prepared, and the growth mechanism along the different directions...
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Published in | Applied surface science Vol. 317; pp. 257 - 261 |
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Language | English |
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Abstract | •The multi-layered nanostructured Bi2Se3 were prepared by CVD using the high purity Se and Bi2Se3 powder as source materials to decrease the Se vacancies in the products.•The wide nanoribbons grown along the [1 1 2¯ 0] direction were prepared, and the growth mechanism along the different directions was analyzed.•The low-temperature growth mechanism of the multi-layered Bi2Se3 nanostructure was analyzed by the Raman spectra with different depths.
High quality multi-layered nanostructured bismuth selenide (Bi2Se3) with an asymmetric, elongated hexagonal morphology were obtained in a selenium-rich atmosphere by chemical vapor deposition (CVD) using high purity Se and Bi2Se3 powder as source materials. The measurement results reveal that Au particles only serve as the initial stage nucleation of the Bi2Se3 nanostructures at a low temperature. The Se powder in the source materials is helpful to ensure the stoichiometry and decrease the selenium vacancies, and causes the wide Bi2Se3 nanoribbons to grow along the lateral direction. |
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AbstractList | •The multi-layered nanostructured Bi2Se3 were prepared by CVD using the high purity Se and Bi2Se3 powder as source materials to decrease the Se vacancies in the products.•The wide nanoribbons grown along the [1 1 2¯ 0] direction were prepared, and the growth mechanism along the different directions was analyzed.•The low-temperature growth mechanism of the multi-layered Bi2Se3 nanostructure was analyzed by the Raman spectra with different depths.
High quality multi-layered nanostructured bismuth selenide (Bi2Se3) with an asymmetric, elongated hexagonal morphology were obtained in a selenium-rich atmosphere by chemical vapor deposition (CVD) using high purity Se and Bi2Se3 powder as source materials. The measurement results reveal that Au particles only serve as the initial stage nucleation of the Bi2Se3 nanostructures at a low temperature. The Se powder in the source materials is helpful to ensure the stoichiometry and decrease the selenium vacancies, and causes the wide Bi2Se3 nanoribbons to grow along the lateral direction. High quality multi-layered nanostructured bismuth selenide (Bi2Se3) with an asymmetric, elongated hexagonal morphology were obtained in a selenium-rich atmosphere by chemical vapor deposition (CVD) using high purity Se and Bi2Se3 powder as source materials. The measurement results reveal that Au particles only serve as the initial stage nucleation of the Bi2Se3 nanostructures at a low temperature. The Se powder in the source materials is helpful to ensure the stoichiometry and decrease the selenium vacancies, and causes the wide Bi2Se3 nanoribbons to grow along the lateral direction. |
Author | Liu, Fu Yan Bi, Dong Man, Bao Yuan Xu, Xue You Liu, Mei |
Author_xml | – sequence: 1 givenname: Mei surname: Liu fullname: Liu, Mei email: liumei@sdnu.edu.cn organization: College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China – sequence: 2 givenname: Fu Yan surname: Liu fullname: Liu, Fu Yan organization: College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China – sequence: 3 givenname: Bao Yuan surname: Man fullname: Man, Bao Yuan organization: College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China – sequence: 4 givenname: Dong surname: Bi fullname: Bi, Dong organization: College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China – sequence: 5 givenname: Xue You surname: Xu fullname: Xu, Xue You organization: Information Research Institute, Shandong Academy of Sciences, Jinan 250014, PR China |
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Cites_doi | 10.1126/science.1173034 10.1038/nchem.1277 10.1063/1.3396190 10.1021/nl200773n 10.1021/nn2024607 10.1021/nl302989v 10.1038/nmat2609 10.1063/1.4792237 10.1016/S0025-5408(01)00717-6 10.1126/science.1093164 10.1002/adfm.201002667 10.1021/nl101260j 10.1002/pssr.201206415 10.1063/1.3494595 10.1063/1.360495 10.1021/nl2034859 10.1021/jp076886b 10.1103/RevModPhys.83.1057 10.1103/PhysRevLett.103.246601 10.1103/RevModPhys.82.3045 10.1038/nature08234 10.1038/srep01264 10.1002/adma.201202936 10.1126/science.1216466 10.1002/pssb.2220840226 |
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Keywords | Topological insulator Multi-layered nanostructure Bismuth selenide Chemical vapor deposition CVD Bismuth selenides Multilayers Inorganic compounds Binary compounds Nanostructures Selenium Film growth |
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References | Li, Gao, Li, Wang, Wu, Zhou, Wang (bib0065) 2013; 102 Hasan, Kane (bib0020) 2010; 82 Chen, Analytis, Chu, Liu, Mo, Qi, Zhang, Lu, Dai, Fang, Zhang, Fisher, Hussain, Shen (bib0040) 2009; 325 Wang, Liu, Xu, Yang, Miao, Yao, Gao, Shen, Ma, Chen, Xu, Liu, Zhang, Qian, Jia, Xue (bib0060) 2012; 336 Lin, Chang, Lu, Liu (bib0070) 2007; 111 Peng, Dang, Cao, Chen, Wu, Zheng, Li, Shen, Liu (bib0095) 2012; 4 Hsieh, Xia, Qian, Wray, Dil, Meier, Osterwalder, Patthey, Checkelsky, Ong, Fedorov, Lin, Bansil, Grauer, Hor, Cava, Hasan (bib0045) 2009; 460 Peng, Lai, Kong, Meister, Chen, Qi, Zhang, Shen, Cui (bib0025) 2010; 9 Soni, Yanyuan, Ligen, Aik, Dresselhaus, Xiong (bib0110) 2012; 12 Zhang, Peng, Soni, Zhao, Xiong, Peng, Wang, Dresselhaus, Xiong (bib0120) 2011; 11 Tang, Liang, Qiu, Gao (bib0030) 2011; 5 Fang, Jia, Miller, Latimer, Xiao, Welp, Crabtree, Kwok (bib0035) 2012; 12 Yan, Zhang, Felser (bib0085) 2013; 7 Shahil, Hossain, Teweldebrhan, Balandin (bib0125) 2010; 96 Xu, Guo, Yao, He, Miao, Jiao, Liu, Wang, Qian, Jia, Ho, Xie (bib0075) 2013; 25 Kong, Dang, Cha, Li, Meister, Peng, Liu, Cui (bib0090) 2010; 10 Yan, Liao, Zhou, Wu, Bie, Chen, Meng, Wu, Yu (bib0115) 2013; 3 Majumdar (bib0010) 2004; 303 Bergman, Nemanich (bib0105) 1995; 78 Song, Wang, Jiang, Zhang, Chang, Wang, He, Chen, Jia, Wang, Fang, Dai, Xie, Qi, Zhang, Xue, Ma (bib0080) 2010; 97 Zhang, Qin, Chen, He, Lu, Li, Wu (bib0055) 2011; 21 Checkelsky, Hor, Liu, Qu, Cava, Ong (bib0050) 2009; 103 Augustine, Mathai (bib0005) 2001; 36 Richter, Becker (bib0100) 1977; 84 Qi, Zhang (bib0015) 2011; 83 Yan (10.1016/j.apsusc.2014.08.103_bib0115) 2013; 3 Shahil (10.1016/j.apsusc.2014.08.103_bib0125) 2010; 96 Qi (10.1016/j.apsusc.2014.08.103_bib0015) 2011; 83 Xu (10.1016/j.apsusc.2014.08.103_bib0075) 2013; 25 Tang (10.1016/j.apsusc.2014.08.103_bib0030) 2011; 5 Soni (10.1016/j.apsusc.2014.08.103_bib0110) 2012; 12 Checkelsky (10.1016/j.apsusc.2014.08.103_bib0050) 2009; 103 Zhang (10.1016/j.apsusc.2014.08.103_bib0120) 2011; 11 Fang (10.1016/j.apsusc.2014.08.103_bib0035) 2012; 12 Wang (10.1016/j.apsusc.2014.08.103_bib0060) 2012; 336 Zhang (10.1016/j.apsusc.2014.08.103_bib0055) 2011; 21 Hasan (10.1016/j.apsusc.2014.08.103_bib0020) 2010; 82 Augustine (10.1016/j.apsusc.2014.08.103_bib0005) 2001; 36 Kong (10.1016/j.apsusc.2014.08.103_bib0090) 2010; 10 Bergman (10.1016/j.apsusc.2014.08.103_bib0105) 1995; 78 Song (10.1016/j.apsusc.2014.08.103_bib0080) 2010; 97 Yan (10.1016/j.apsusc.2014.08.103_bib0085) 2013; 7 Peng (10.1016/j.apsusc.2014.08.103_bib0095) 2012; 4 Majumdar (10.1016/j.apsusc.2014.08.103_bib0010) 2004; 303 Richter (10.1016/j.apsusc.2014.08.103_bib0100) 1977; 84 Peng (10.1016/j.apsusc.2014.08.103_bib0025) 2010; 9 Hsieh (10.1016/j.apsusc.2014.08.103_bib0045) 2009; 460 Chen (10.1016/j.apsusc.2014.08.103_bib0040) 2009; 325 Lin (10.1016/j.apsusc.2014.08.103_bib0070) 2007; 111 Li (10.1016/j.apsusc.2014.08.103_bib0065) 2013; 102 |
References_xml | – volume: 460 start-page: 1101 year: 2009 end-page: 1105 ident: bib0045 article-title: A tunable topological insulator in the spin helical Dirac transport regime publication-title: Nature contributor: fullname: Hasan – volume: 111 start-page: 18538 year: 2007 end-page: 18544 ident: bib0070 article-title: Preparation, characterization, and electrophysical properties of nanostructured BiPO publication-title: J. Phys. Chem. C contributor: fullname: Liu – volume: 11 start-page: 2407 year: 2011 end-page: 2414 ident: bib0120 article-title: Raman spectroscopy of few-quintuple layer topological insulator Bi publication-title: Nano Lett. contributor: fullname: Xiong – volume: 325 start-page: 178 year: 2009 end-page: 181 ident: bib0040 article-title: Experimental realization of a three-dimensional topological insulator, Bi publication-title: Science contributor: fullname: Shen – volume: 36 start-page: 2251 year: 2001 end-page: 2261 ident: bib0005 article-title: Growth, morphology, and microindentation analysis of Bi publication-title: Mater. Res. Bull. contributor: fullname: Mathai – volume: 96 start-page: 153103 year: 2010 ident: bib0125 article-title: Crystal symmetry breaking in few-quintuple Bi publication-title: Appl. Phys. Lett. contributor: fullname: Balandin – volume: 103 start-page: 246601 year: 2009 ident: bib0050 article-title: Quantum interference in macroscopic crystals of nonmetallic Bi publication-title: Phys. Rev. Lett. contributor: fullname: Ong – volume: 10 start-page: 2245 year: 2010 end-page: 2250 ident: bib0090 article-title: Few-layer nanoplates of Bi publication-title: Nano Lett. contributor: fullname: Cui – volume: 4 start-page: 281 year: 2012 end-page: 286 ident: bib0095 article-title: Topological insulator nanostructures for near-infrared transparent flexible electrodes publication-title: Nat. Chem. contributor: fullname: Liu – volume: 12 start-page: 1203 year: 2012 end-page: 1209 ident: bib0110 article-title: Enhanced thermoelectric properties of solution grown Bi publication-title: Nano Lett. contributor: fullname: Xiong – volume: 3 start-page: 1264 year: 2013 ident: bib0115 article-title: Synthesis and quantum transport properties of Bi publication-title: Sci. Rep. contributor: fullname: Yu – volume: 303 start-page: 777 year: 2004 end-page: 778 ident: bib0010 article-title: Thermoelectricity in semiconductor nanostructures publication-title: Science contributor: fullname: Majumdar – volume: 7 start-page: 148 year: 2013 end-page: 150 ident: bib0085 article-title: Topological surface states of Bi publication-title: Phys. Status Solidi RRL contributor: fullname: Felser – volume: 83 start-page: 1057 year: 2011 end-page: 1110 ident: bib0015 article-title: Topological insulators and superconductors publication-title: Rev. Mod. Phys. contributor: fullname: Zhang – volume: 102 start-page: 074106 year: 2013 ident: bib0065 article-title: Growth and band alignment of Bi publication-title: Appl. Phys. Lett. contributor: fullname: Wang – volume: 9 start-page: 225 year: 2010 end-page: 229 ident: bib0025 article-title: Aharonov–Bohm interference in topological insulator nanoribbons publication-title: Nat. Mater. contributor: fullname: Cui – volume: 97 start-page: 143118 year: 2010 ident: bib0080 article-title: Topological insulator Bi publication-title: Appl. Phys. Lett. contributor: fullname: Ma – volume: 12 start-page: 6164 year: 2012 end-page: 6169 ident: bib0035 article-title: Catalyst-free growth of millimeter-long topological insulator Bi publication-title: Nano Lett. contributor: fullname: Kwok – volume: 78 start-page: 6709 year: 1995 end-page: 6719 ident: bib0105 article-title: Raman and photoluminescence analysis of stress state and impurity distribution in diamond thin films publication-title: J. Appl. Phys. contributor: fullname: Nemanich – volume: 336 start-page: 52 year: 2012 end-page: 55 ident: bib0060 article-title: The coexistence of superconductivity and topological order in the Bi publication-title: Science contributor: fullname: Xue – volume: 5 start-page: 7510 year: 2011 end-page: 7516 ident: bib0030 article-title: Two-dimensional transport-induced linear magneto-resistance in topological insulator Bi publication-title: ACS Nano contributor: fullname: Gao – volume: 84 start-page: 619 year: 1977 end-page: 628 ident: bib0100 article-title: A Raman and far-infrared investigation of phonons in the rhombohedral V publication-title: Phys. Status Solidi (b) contributor: fullname: Becker – volume: 82 start-page: 3045 year: 2010 end-page: 3067 ident: bib0020 article-title: Colloquium: topological insulators publication-title: Rev. Mod. Phys. contributor: fullname: Kane – volume: 21 start-page: 2351 year: 2011 end-page: 2355 ident: bib0055 article-title: Growth of topological insulator Bi publication-title: Adv. Funct. Mater. contributor: fullname: Wu – volume: 25 start-page: 1557 year: 2013 end-page: 1562 ident: bib0075 article-title: Anisotropic topological surface states on high index Bi publication-title: Adv. Mater. contributor: fullname: Xie – volume: 325 start-page: 178 year: 2009 ident: 10.1016/j.apsusc.2014.08.103_bib0040 article-title: Experimental realization of a three-dimensional topological insulator, Bi2Te3 publication-title: Science doi: 10.1126/science.1173034 contributor: fullname: Chen – volume: 4 start-page: 281 year: 2012 ident: 10.1016/j.apsusc.2014.08.103_bib0095 article-title: Topological insulator nanostructures for near-infrared transparent flexible electrodes publication-title: Nat. Chem. doi: 10.1038/nchem.1277 contributor: fullname: Peng – volume: 96 start-page: 153103 year: 2010 ident: 10.1016/j.apsusc.2014.08.103_bib0125 article-title: Crystal symmetry breaking in few-quintuple Bi2Te3 films: applications in nanometrology of topological insulators publication-title: Appl. Phys. Lett. doi: 10.1063/1.3396190 contributor: fullname: Shahil – volume: 11 start-page: 2407 year: 2011 ident: 10.1016/j.apsusc.2014.08.103_bib0120 article-title: Raman spectroscopy of few-quintuple layer topological insulator Bi2Se3 nanoplatelets publication-title: Nano Lett. doi: 10.1021/nl200773n contributor: fullname: Zhang – volume: 5 start-page: 7510 year: 2011 ident: 10.1016/j.apsusc.2014.08.103_bib0030 article-title: Two-dimensional transport-induced linear magneto-resistance in topological insulator Bi2Se3 nanoribbons publication-title: ACS Nano doi: 10.1021/nn2024607 contributor: fullname: Tang – volume: 12 start-page: 6164 year: 2012 ident: 10.1016/j.apsusc.2014.08.103_bib0035 article-title: Catalyst-free growth of millimeter-long topological insulator Bi2Se3 nanoribbons and the observation of the π-Berry phase publication-title: Nano Lett. doi: 10.1021/nl302989v contributor: fullname: Fang – volume: 9 start-page: 225 year: 2010 ident: 10.1016/j.apsusc.2014.08.103_bib0025 article-title: Aharonov–Bohm interference in topological insulator nanoribbons publication-title: Nat. Mater. doi: 10.1038/nmat2609 contributor: fullname: Peng – volume: 102 start-page: 074106 year: 2013 ident: 10.1016/j.apsusc.2014.08.103_bib0065 article-title: Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface publication-title: Appl. Phys. Lett. doi: 10.1063/1.4792237 contributor: fullname: Li – volume: 36 start-page: 2251 year: 2001 ident: 10.1016/j.apsusc.2014.08.103_bib0005 article-title: Growth, morphology, and microindentation analysis of Bi2Se3, Bi1.8In0.2Se3, and Bi2Se2.8Te0.2 single crystals publication-title: Mater. Res. Bull. doi: 10.1016/S0025-5408(01)00717-6 contributor: fullname: Augustine – volume: 303 start-page: 777 year: 2004 ident: 10.1016/j.apsusc.2014.08.103_bib0010 article-title: Thermoelectricity in semiconductor nanostructures publication-title: Science doi: 10.1126/science.1093164 contributor: fullname: Majumdar – volume: 21 start-page: 2351 year: 2011 ident: 10.1016/j.apsusc.2014.08.103_bib0055 article-title: Growth of topological insulator Bi2Se3 thin films on SrTiO3 with large tunability in chemical potential publication-title: Adv. Funct. Mater. doi: 10.1002/adfm.201002667 contributor: fullname: Zhang – volume: 10 start-page: 2245 year: 2010 ident: 10.1016/j.apsusc.2014.08.103_bib0090 article-title: Few-layer nanoplates of Bi2Se3 and Bi2Te3 with highly tunable chemical potential publication-title: Nano Lett. doi: 10.1021/nl101260j contributor: fullname: Kong – volume: 7 start-page: 148 year: 2013 ident: 10.1016/j.apsusc.2014.08.103_bib0085 article-title: Topological surface states of Bi2Se3 coexisting with selenium vacancies publication-title: Phys. Status Solidi RRL doi: 10.1002/pssr.201206415 contributor: fullname: Yan – volume: 97 start-page: 143118 year: 2010 ident: 10.1016/j.apsusc.2014.08.103_bib0080 article-title: Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy publication-title: Appl. Phys. Lett. doi: 10.1063/1.3494595 contributor: fullname: Song – volume: 78 start-page: 6709 year: 1995 ident: 10.1016/j.apsusc.2014.08.103_bib0105 article-title: Raman and photoluminescence analysis of stress state and impurity distribution in diamond thin films publication-title: J. Appl. Phys. doi: 10.1063/1.360495 contributor: fullname: Bergman – volume: 12 start-page: 1203 year: 2012 ident: 10.1016/j.apsusc.2014.08.103_bib0110 article-title: Enhanced thermoelectric properties of solution grown Bi2Te3−xSex nanoplatelet composites publication-title: Nano Lett. doi: 10.1021/nl2034859 contributor: fullname: Soni – volume: 111 start-page: 18538 year: 2007 ident: 10.1016/j.apsusc.2014.08.103_bib0070 article-title: Preparation, characterization, and electrophysical properties of nanostructured BiPO4 and Bi2Se3 derived from a structurally characterized, single-source precursor Bi[Se2P(OiPr)2]3 publication-title: J. Phys. Chem. C doi: 10.1021/jp076886b contributor: fullname: Lin – volume: 83 start-page: 1057 year: 2011 ident: 10.1016/j.apsusc.2014.08.103_bib0015 article-title: Topological insulators and superconductors publication-title: Rev. Mod. Phys. doi: 10.1103/RevModPhys.83.1057 contributor: fullname: Qi – volume: 103 start-page: 246601 year: 2009 ident: 10.1016/j.apsusc.2014.08.103_bib0050 article-title: Quantum interference in macroscopic crystals of nonmetallic Bi2Se3 publication-title: Phys. Rev. Lett. doi: 10.1103/PhysRevLett.103.246601 contributor: fullname: Checkelsky – volume: 82 start-page: 3045 year: 2010 ident: 10.1016/j.apsusc.2014.08.103_bib0020 article-title: Colloquium: topological insulators publication-title: Rev. Mod. Phys. doi: 10.1103/RevModPhys.82.3045 contributor: fullname: Hasan – volume: 460 start-page: 1101 year: 2009 ident: 10.1016/j.apsusc.2014.08.103_bib0045 article-title: A tunable topological insulator in the spin helical Dirac transport regime publication-title: Nature doi: 10.1038/nature08234 contributor: fullname: Hsieh – volume: 3 start-page: 1264 year: 2013 ident: 10.1016/j.apsusc.2014.08.103_bib0115 article-title: Synthesis and quantum transport properties of Bi2Se3 topological insulator nanostructures publication-title: Sci. Rep. doi: 10.1038/srep01264 contributor: fullname: Yan – volume: 25 start-page: 1557 year: 2013 ident: 10.1016/j.apsusc.2014.08.103_bib0075 article-title: Anisotropic topological surface states on high index Bi2Se3 films publication-title: Adv. Mater. doi: 10.1002/adma.201202936 contributor: fullname: Xu – volume: 336 start-page: 52 year: 2012 ident: 10.1016/j.apsusc.2014.08.103_bib0060 article-title: The coexistence of superconductivity and topological order in the Bi2Se3 thin films publication-title: Science doi: 10.1126/science.1216466 contributor: fullname: Wang – volume: 84 start-page: 619 year: 1977 ident: 10.1016/j.apsusc.2014.08.103_bib0100 article-title: A Raman and far-infrared investigation of phonons in the rhombohedral V2-VI3 compounds Bi2Te3, Bi2Se3, Sb2Te3 and Bi2(Te1−xSex)3 (0<x<1), (Bi1−ySby)2Te3 (0<y<1) publication-title: Phys. Status Solidi (b) doi: 10.1002/pssb.2220840226 contributor: fullname: Richter |
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Snippet | •The multi-layered nanostructured Bi2Se3 were prepared by CVD using the high purity Se and Bi2Se3 powder as source materials to decrease the Se vacancies in... High quality multi-layered nanostructured bismuth selenide (Bi2Se3) with an asymmetric, elongated hexagonal morphology were obtained in a selenium-rich... |
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SubjectTerms | Asymmetry Atmospheres Bismuth Bismuth selenide Chemical vapor deposition Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science; rheology Elongation Exact sciences and technology Multi-layered nanostructure Nanostructure Nucleation Physics Selenides Topological insulator |
Title | Multi-layered nanostructure Bi2Se3 grown by chemical vapor deposition in selenium-rich atmosphere |
URI | https://dx.doi.org/10.1016/j.apsusc.2014.08.103 https://search.proquest.com/docview/1660040052 |
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