Multi-layered nanostructure Bi2Se3 grown by chemical vapor deposition in selenium-rich atmosphere

•The multi-layered nanostructured Bi2Se3 were prepared by CVD using the high purity Se and Bi2Se3 powder as source materials to decrease the Se vacancies in the products.•The wide nanoribbons grown along the [1 1 2¯ 0] direction were prepared, and the growth mechanism along the different directions...

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Published inApplied surface science Vol. 317; pp. 257 - 261
Main Authors Liu, Mei, Liu, Fu Yan, Man, Bao Yuan, Bi, Dong, Xu, Xue You
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 30.10.2014
Elsevier
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Abstract •The multi-layered nanostructured Bi2Se3 were prepared by CVD using the high purity Se and Bi2Se3 powder as source materials to decrease the Se vacancies in the products.•The wide nanoribbons grown along the [1 1 2¯ 0] direction were prepared, and the growth mechanism along the different directions was analyzed.•The low-temperature growth mechanism of the multi-layered Bi2Se3 nanostructure was analyzed by the Raman spectra with different depths. High quality multi-layered nanostructured bismuth selenide (Bi2Se3) with an asymmetric, elongated hexagonal morphology were obtained in a selenium-rich atmosphere by chemical vapor deposition (CVD) using high purity Se and Bi2Se3 powder as source materials. The measurement results reveal that Au particles only serve as the initial stage nucleation of the Bi2Se3 nanostructures at a low temperature. The Se powder in the source materials is helpful to ensure the stoichiometry and decrease the selenium vacancies, and causes the wide Bi2Se3 nanoribbons to grow along the lateral direction.
AbstractList •The multi-layered nanostructured Bi2Se3 were prepared by CVD using the high purity Se and Bi2Se3 powder as source materials to decrease the Se vacancies in the products.•The wide nanoribbons grown along the [1 1 2¯ 0] direction were prepared, and the growth mechanism along the different directions was analyzed.•The low-temperature growth mechanism of the multi-layered Bi2Se3 nanostructure was analyzed by the Raman spectra with different depths. High quality multi-layered nanostructured bismuth selenide (Bi2Se3) with an asymmetric, elongated hexagonal morphology were obtained in a selenium-rich atmosphere by chemical vapor deposition (CVD) using high purity Se and Bi2Se3 powder as source materials. The measurement results reveal that Au particles only serve as the initial stage nucleation of the Bi2Se3 nanostructures at a low temperature. The Se powder in the source materials is helpful to ensure the stoichiometry and decrease the selenium vacancies, and causes the wide Bi2Se3 nanoribbons to grow along the lateral direction.
High quality multi-layered nanostructured bismuth selenide (Bi2Se3) with an asymmetric, elongated hexagonal morphology were obtained in a selenium-rich atmosphere by chemical vapor deposition (CVD) using high purity Se and Bi2Se3 powder as source materials. The measurement results reveal that Au particles only serve as the initial stage nucleation of the Bi2Se3 nanostructures at a low temperature. The Se powder in the source materials is helpful to ensure the stoichiometry and decrease the selenium vacancies, and causes the wide Bi2Se3 nanoribbons to grow along the lateral direction.
Author Liu, Fu Yan
Bi, Dong
Man, Bao Yuan
Xu, Xue You
Liu, Mei
Author_xml – sequence: 1
  givenname: Mei
  surname: Liu
  fullname: Liu, Mei
  email: liumei@sdnu.edu.cn
  organization: College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China
– sequence: 2
  givenname: Fu Yan
  surname: Liu
  fullname: Liu, Fu Yan
  organization: College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China
– sequence: 3
  givenname: Bao Yuan
  surname: Man
  fullname: Man, Bao Yuan
  organization: College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China
– sequence: 4
  givenname: Dong
  surname: Bi
  fullname: Bi, Dong
  organization: College of Physics and Electronics, Shandong Normal University, Jinan 250014, PR China
– sequence: 5
  givenname: Xue You
  surname: Xu
  fullname: Xu, Xue You
  organization: Information Research Institute, Shandong Academy of Sciences, Jinan 250014, PR China
BackLink http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=28872084$$DView record in Pascal Francis
BookMark eNp9kE9r3DAQxUVJoZu036AHXQq5eKN_tuVLoQlpE0jIoe1ZyNK4q8WWXI2dst8-Wjb0mNPAzG_em3nn5CymCIR85mzLGW-u9ls744puKxhXW6ZLV74jG65bWdW1VmdkU7CuUlKKD-Qccc8YF2W6IfZxHZdQjfYAGTyNNiZc8uqWNQO9DuInSPonp3-R9gfqdjAFZ0f6bOeUqYc5YVhCijREijBCDOtU5eB21C5TwnlXRD-S94MdET691gvy-_vtr5u76uHpx_3Nt4fKia5bqsECb_q-cwDetrxhWvaDcx1T0jLR9LXyXrfAHXDet2099N551TcF0brjSl6Qy5PunNPfFXAxU0AH42gjpBUNbxrGFGO1KKg6oS4nxAyDmXOYbD4YzswxUbM3p0TNMVHDdOnKsvbl1cFiSWHINrqA_3eF1q1g-njJ1xMH5d3nANmgCxAd-JDBLcan8LbRC89Akjc
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ContentType Journal Article
Copyright 2014 Elsevier B.V.
2015 INIST-CNRS
Copyright_xml – notice: 2014 Elsevier B.V.
– notice: 2015 INIST-CNRS
DBID IQODW
AAYXX
CITATION
7SR
7U5
8BQ
8FD
JG9
L7M
DOI 10.1016/j.apsusc.2014.08.103
DatabaseName Pascal-Francis
CrossRef
Engineered Materials Abstracts
Solid State and Superconductivity Abstracts
METADEX
Technology Research Database
Materials Research Database
Advanced Technologies Database with Aerospace
DatabaseTitle CrossRef
Materials Research Database
Engineered Materials Abstracts
Solid State and Superconductivity Abstracts
Technology Research Database
Advanced Technologies Database with Aerospace
METADEX
DatabaseTitleList
Materials Research Database
DeliveryMethod fulltext_linktorsrc
Discipline Engineering
Physics
EISSN 1873-5584
EndPage 261
ExternalDocumentID 10_1016_j_apsusc_2014_08_103
28872084
S0169433214018534
GroupedDBID --K
--M
-~X
.~1
0R~
1B1
1RT
1~.
1~5
23M
4.4
457
4G.
5GY
5VS
6J9
7-5
71M
8P~
9JN
AABNK
AABXZ
AACTN
AAEDT
AAEDW
AAEPC
AAIAV
AAIKJ
AAKOC
AALRI
AAOAW
AAQFI
AARLI
AAXUO
ABFNM
ABFRF
ABJNI
ABMAC
ABNEU
ABXDB
ABXRA
ABYKQ
ACBEA
ACDAQ
ACFVG
ACGFO
ACGFS
ACRLP
ADBBV
ADECG
ADEZE
AEBSH
AEFWE
AEKER
AENEX
AEZYN
AFKWA
AFRZQ
AFTJW
AFZHZ
AGHFR
AGUBO
AGYEJ
AHHHB
AIEXJ
AIKHN
AITUG
AIVDX
AJBFU
AJOXV
AJSZI
ALMA_UNASSIGNED_HOLDINGS
AMFUW
AMRAJ
AXJTR
BKOJK
BLXMC
CS3
EBS
EFJIC
EFLBG
EJD
EO8
EO9
EP2
EP3
F5P
FDB
FIRID
FLBIZ
FNPLU
FYGXN
G-Q
GBLVA
IHE
J1W
KOM
M24
M38
M41
MAGPM
MO0
N9A
O-L
O9-
OAUVE
OGIMB
OZT
P-8
P-9
P2P
PC.
Q38
RIG
RNS
ROL
RPZ
SCB
SDF
SDG
SDP
SES
SMS
SPC
SPCBC
SPD
SPG
SSK
SSM
SSQ
SSZ
T5K
TN5
WH7
XPP
ZMT
~02
~G-
AALMO
AAPBV
AAQXK
ABPIF
ABPTK
ABQIS
ACNNM
ADALY
ASPBG
AVWKF
AZFZN
BBWZM
FEDTE
FGOYB
G-2
HMV
HVGLF
HZ~
IPNFZ
IQODW
NDZJH
R2-
SEW
VOH
WUQ
XFK
AAXKI
AAYXX
ADMUD
AFJKZ
AKRWK
CITATION
7SR
7U5
8BQ
8FD
JG9
L7M
ID FETCH-LOGICAL-c299t-fae16bb9ceeda716083bfcc9043a026b54dd87e1ce11b775fbdcd4b6cc9889143
IEDL.DBID AIKHN
ISSN 0169-4332
IngestDate Fri Oct 25 01:45:48 EDT 2024
Thu Sep 26 15:54:07 EDT 2024
Fri Nov 25 01:12:23 EST 2022
Fri Feb 23 02:19:03 EST 2024
IsPeerReviewed true
IsScholarly true
Keywords Topological insulator
Multi-layered nanostructure
Bismuth selenide
Chemical vapor deposition
CVD
Bismuth selenides
Multilayers
Inorganic compounds
Binary compounds
Nanostructures
Selenium
Film growth
Language English
License CC BY 4.0
LinkModel DirectLink
MergedId FETCHMERGED-LOGICAL-c299t-fae16bb9ceeda716083bfcc9043a026b54dd87e1ce11b775fbdcd4b6cc9889143
Notes ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
PQID 1660040052
PQPubID 23500
PageCount 5
ParticipantIDs proquest_miscellaneous_1660040052
crossref_primary_10_1016_j_apsusc_2014_08_103
pascalfrancis_primary_28872084
elsevier_sciencedirect_doi_10_1016_j_apsusc_2014_08_103
PublicationCentury 2000
PublicationDate 2014-10-30
PublicationDateYYYYMMDD 2014-10-30
PublicationDate_xml – month: 10
  year: 2014
  text: 2014-10-30
  day: 30
PublicationDecade 2010
PublicationPlace Amsterdam
PublicationPlace_xml – name: Amsterdam
PublicationTitle Applied surface science
PublicationYear 2014
Publisher Elsevier B.V
Elsevier
Publisher_xml – name: Elsevier B.V
– name: Elsevier
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SSID ssj0012873
Score 2.31168
Snippet •The multi-layered nanostructured Bi2Se3 were prepared by CVD using the high purity Se and Bi2Se3 powder as source materials to decrease the Se vacancies in...
High quality multi-layered nanostructured bismuth selenide (Bi2Se3) with an asymmetric, elongated hexagonal morphology were obtained in a selenium-rich...
SourceID proquest
crossref
pascalfrancis
elsevier
SourceType Aggregation Database
Index Database
Publisher
StartPage 257
SubjectTerms Asymmetry
Atmospheres
Bismuth
Bismuth selenide
Chemical vapor deposition
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Elongation
Exact sciences and technology
Multi-layered nanostructure
Nanostructure
Nucleation
Physics
Selenides
Topological insulator
Title Multi-layered nanostructure Bi2Se3 grown by chemical vapor deposition in selenium-rich atmosphere
URI https://dx.doi.org/10.1016/j.apsusc.2014.08.103
https://search.proquest.com/docview/1660040052
Volume 317
hasFullText 1
inHoldings 1
isFullTextHit
isPrint
link http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LT9wwEB7BcmmFUOlDLKUrV-rVbJzYiXMEBNq2ggtF4mb5lTZVya7YXSQu_PbO5IFAHCr1GCuRo8_2NzPyzDcAX4LOYiVCxrVQlsuQK66dwIMXisxZGYvKUzXy-UU-u5LfrtX1BpwMtTCUVtlzf8fpLVv3I9MezemirqeXpCNC6lsUIqDRkZuw1V4SjWDr6Ov32cXjZQIGBVkn8V1SgVA6VNC1aV4Wg9ElaRkKSVqeYuie9dJCbS_sEnGruoYXL7i7NUhnb2Cn9yTZUfezu7ARm7fw-om-4DuwbXkt_2PvqSMna2wz7_Ri17eRHdfpZczYT4rDmbtnvpcOYHcWfXIW4pDPxeqGUU-mpl7fcKTNX8yubuZL0iOI7-Hq7PTHyYz3PRW4R8Oz4pWNIneuJNtoMVZCD8xV3peJzCyGY07JEHQRhY9CuKJQlQs-SJfjK1qX6Fx9gFEzb-IesBwxV0nuVSVTEhO1OjgVEh3QZ6lKr8fABxzNopPOMENO2W_T4W4Id5NoHM3GUAxgm2dbwCC7_-PLybO1eZwuRQpNEy3H8HlYLIPHh-5EbBPn66URed7ymEr3_3v6j_CKnlqLlhzACBcyfkJXZeUmsHn4ICb9hvwLb83rFQ
link.rule.ids 315,783,787,4511,24130,27938,27939,45599,45693
linkProvider Elsevier
linkToHtml http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1NT9wwEB1ROFBUVQVadVsKrsTV2jixE-dIEWgpsBdA4mb5KyVVya7Y3Ur8-87kAxVxqNSrk8jRs_1mRp55A3AYdBYrETKuhbJchlxx7QQevFBkzspYVJ6qkS-n-eRGfr9Vt2twPNTCUFplz_0dp7ds3Y-MezTH87oeX5GOCKlvUYiARke-gg30Bkrc7BtHZ-eT6dNlAgYFWSfxXVKBUDpU0LVpXhaD0QVpGQpJWp5i6J710kK9mdsF4lZ1DS9ecHdrkE7fwdvek2RH3c9uw1psdmDrL33BXbBteS3_ZR-pIydrbDPr9GJXD5F9q9OrmLEfFIcz98h8Lx3Aflv0yVmIQz4XqxtGPZmaenXPkTbvmF3ezxakRxDfw83pyfXxhPc9FbhHw7PklY0id64k22gxVkIPzFXel4nMLIZjTskQdBGFj0K4olCVCz5Il-MrWpfoXH2A9WbWxI_AcsRcJblXlUxJTNTq4FRIdECfpSq9HgEfcDTzTjrDDDllP02HuyHcTaJxNBtBMYBtnm0Bg-z-jy_3n63N03QpUmiaaDmCr8NiGTw-dCdimzhbLYzI85bHVPrpv6c_gM3J9eWFuTibnn-G1_SktW7JHqzjosYv6LYs3X6_Lf8AOG_tEg
openUrl ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Multi-layered+nanostructure+Bi2Se3+grown+by+chemical+vapor+deposition+in+selenium-rich+atmosphere&rft.jtitle=Applied+surface+science&rft.au=MEI+LIU&rft.au=FU+YAN+LIU&rft.au=BAO+YUAN+MAN&rft.au=DONG+BI&rft.date=2014-10-30&rft.pub=Elsevier&rft.issn=0169-4332&rft.eissn=1873-5584&rft.volume=317&rft.spage=257&rft.epage=261&rft_id=info:doi/10.1016%2Fj.apsusc.2014.08.103&rft.externalDBID=n%2Fa&rft.externalDocID=28872084
thumbnail_l http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0169-4332&client=summon
thumbnail_m http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0169-4332&client=summon
thumbnail_s http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0169-4332&client=summon