Structural, optical, and electrical properties of Cu2O nanocubes grown on indium-tin-oxide-coated glass substrates by using seed-layer-free electrochemical deposition method
► P-type Cu2O nanocubes were formed on indium-tin-oxide (ITO)-coated glass substrates without catalysts by using electrochemical deposition method. ► X-ray diffraction pattern showed that the nanocubes are in cubic phase, and photoluminescence spectra showed a dominant green band edge emission appea...
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Published in | Applied surface science Vol. 258; no. 19; pp. 7581 - 7583 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
15.07.2012
Elsevier |
Subjects | |
Online Access | Get full text |
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Summary: | ► P-type Cu2O nanocubes were formed on indium-tin-oxide (ITO)-coated glass substrates without catalysts by using electrochemical deposition method. ► X-ray diffraction pattern showed that the nanocubes are in cubic phase, and photoluminescence spectra showed a dominant green band edge emission appearing at around 500nm. ► The ECD growth method had excellent advantages of simple, low cost, templateless, and mass production. ► The current–voltage characteristics for the Au/n-Al-doped ZnO (AZO)/p-Cu2O nanocube/ITO diodes showed current rectifying behavior with a turn-on voltage of 3.6V. ► These results indicate that n-AZO/p-Cu2O nanocube diodes hold promise for potential applications in next-generation optoelectronic devices.
Electrochemical deposition was employed to fabricate Cu2O nanocubes on indium-tin-oxide (ITO)-coated glass substrates at 75°C without using any template, catalyst, or seed layer. Scanning electron microscopy images showed that the Cu2O nanocubes with a nanoscale size were uniformly formed on ITO-coated glass substrates. X-ray patterns of the Cu2O nanocubes exhibited the dominant peaks corresponding to the Cu2O cubic structures. The current–voltage curves of an Au/n-type Al-doped ZnO/p-type Cu2O nanocube/ITO device clearly showed current rectifying behavior with a turn-on voltage of 3.6V. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2012.04.091 |