Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects
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| Published in | Semiconductor science and technology Vol. 15; no. 2; pp. 85 - 90 |
|---|---|
| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
Bristol
IOP Publishing
01.02.2000
Institute of Physics |
| Subjects | |
| Online Access | Get full text |
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| Author | López-Villanueva, Juan A Cartujo, P Carceller, J E Rodríguez, Salvador |
|---|---|
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| Cites_doi | 10.1109/T-ED.1983.21290 10.1109/16.69917 10.1103/PhysRev.163.816 10.1016/0038-1101(90)90138-5 10.1103/PhysRevB.5.4208 10.1109/16.641361 10.1103/PhysRev.97.869 10.1103/RevModPhys.54.437 10.1103/PhysRev.102.1030 10.1016/0038-1101(89)90060-9 10.1063/1.370749 10.1103/PhysRevB.43.7027 |
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| Copyright | 2000 INIST-CNRS |
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| Issue | 2 |
| Keywords | Luttinger liquid Doping Empirical method Self consistency Theoretical study MOS structure Surfaces Poisson equation Closed form equation MOS junctions Hamiltonians Analytical method Schroedinger equation Semiempirical method Inversion layers Impurity states Surface potential Quantum theory |
| Language | English |
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| References | 11 Arora N D (15) 1995 13 Tsividis Y P (14) 1993 Baccarani G (2) 1983; 30 1 3 4 5 Sabnis A G (12) 1979 6 7 8 9 10 |
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| SubjectTerms | Condensed matter: electronic structure, electrical, magnetic, and optical properties Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport in interface structures Exact sciences and technology Metal-insulator-semiconductor structures (including semiconductor-to-insulator) Physics |
| Title | Semiempirical closed-form models for the inversion-layer centroid of a p-MOS including quantum effects |
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