Effect of defect creation and migration on hump characteristics of a-InGaZnO thin film transistors under long-term drain bias stress with light illumination

• Published in: Solid-state electronics Vol. 144; pp. 95 - 100
• Main Authors: Cho, Yong-Jung, Kim, Woo-Sic, Lee, Yeol-Hyeong, Park, Jeong Ki, Kim, Geon Tae, Kim, Ohyun
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2018

•The hump phenomenon in I-V characteristics was occurred in a-IGZO TFTs under drain bias illumination stress.•A two-dimensional device simulation shows that the hump phenomenon was related with shallow donor-like states.•Stretched-out C-V for the drain and simulated electric field distribution indic...