EUV multilayer defect characterization via cycle-consistent learning

• Published in: Optics express Vol. 28; no. 12; pp. 18493 - 18506
• Main Authors: Chen, Ying, Lin, Yibo, Chen, Rui, Dong, Lisong, Wu, Ruixuan, Gai, Tianyang, Ma, Le, Su, Yajuan, Wei, Yayi
• Format: Journal Article
• Language: English
• Published: 08.06.2020

Extreme ultraviolet (EUV) lithography mask defects may cause severe reflectivity deformation and phase shift in advanced nodes, especially like multilayer defects. Geometric parameter characterization is essential for mask defect compensation or repair. In this paper, we propose a machine learning f...