High pressure Raman scattering of a co-evaporated Cu2SnSe3 thin film

• Published in: Thin solid films Vol. 647; pp. 9 - 12
• Main Authors: Kim, Yongshin, Choi, In-Hwan
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.02.2018
• Subjects: Co-evaporation; Copper tin selenide; High pressure; Raman; Thin film; Raman; Co-evaporation; Copper tin selenide; High pressure; Thin film
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/j.tsf.2017.11.014

We fabricated Cu2SnSe3 thin film on a Mo-coated soda-lime glass substrate by a co-evaporation method. The X-ray diffraction pattern revealed the formation of polycrystalline Cu2SnSe3 with a monoclinic structure (space group Cc). Raman scattering measurements were also performed on the thin film at a pressure ranging from 1atm to 7.01GPa. The Raman spectrum was resolved into 4 Lorentzian peaks observed at 184cm−1, 206cm−1, 236cm−1, and 252cm−1 at 1atm, which correspond to A′, A″, A″, and A′ symmetry, respectively. The effects of pressure on these Raman-active phonon modes were discussed. The measured elastic properties of Cu2SnSe3 under high pressure were also compared with those of Cu2ZnSnSe4. •Cu2SnSe3 thin film was fabricated on a Mo-coated soda-lime glass substrate.•Raman spectra of the thin film were obtained at a pressure from 1atm to 7.0GPa.•The pressure-dependence of the Raman-active phonon modes was investigated.•The pressure-dependence was also compared with that of Cu2ZnSnSe4.