BDAPbI4 Dion Jacobson hybrid perovskite-based artificial nociceptors on biodegradable substrate
With the current evolution in artificial intelligence technology, biodegradable biomimetic devices are essential to execute increasingly complicated tasks and respond to challenging work environments. Consequently, the integration of artificial nociceptors holds considerable importance in enhancing...
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Published in | Sensors and actuators. A. Physical. Vol. 373; p. 115382 |
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Main Authors | , , , , , , , |
Format | Journal Article |
Language | English |
Published |
Elsevier B.V
01.08.2024
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Subjects | |
Online Access | Get full text |
ISSN | 0924-4247 1873-3069 |
DOI | 10.1016/j.sna.2024.115382 |
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Abstract | With the current evolution in artificial intelligence technology, biodegradable biomimetic devices are essential to execute increasingly complicated tasks and respond to challenging work environments. Consequently, the integration of artificial nociceptors holds considerable importance in enhancing the capabilities of humanoid robots. Low-dimensional Hybrid organic–inorganic Perovskites (HOIPs) show promise in emulating biological neurons owing to their inherent ion migration properties. In this work, we present Dion-Jacobson hybrid perovskite (BDAPbI4 (BDA=NH3C4H8NH3)) diffusive memristor on a paper substrate to serve as an artificial nociceptor. The symmetric electrode configuration as Paper/Ag/PCBM/BDAPbI4/PMMA/Ag demonstrates low operating voltage diffusive memristor with an ON/OFF ratio of ∼103. The surface investigation of device before top electrode deposition via X-ray photoelectron spectroscopy XPS and electrical characteristics of the complete device reveal the interplay between Schottky barrier at BDAPbI4/Ag interface and conductive filament formation/rupture within active layer as the origin of the abrupt resistive switching. The characteristics of the diffusive memristor resemble those of biological nociceptors, displaying sensitivity to external stimuli and key attributes such as threshold response, lack of adaptation, and relaxation. These findings underscore the potential application of Dion-Jacobson hybrid perovskites (BDAPbI4) as diffusive memristors in future neuromorphic intelligence systems.
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•Paper based artificial nociceptor devices are idel for green electronics.•Dion Jacobson hybrid perovskite is an excellent choice as resistive switching meadim.•We show the resistance switching ratio ∼103 at low operating voltage.•The complex interplay between Schottky emission and formation/rupture of conducting filament is the origin of resistive switching.•Devices show threshold response, lack of adaptation, and relaxation, analogues to the biological nociceptor. |
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AbstractList | With the current evolution in artificial intelligence technology, biodegradable biomimetic devices are essential to execute increasingly complicated tasks and respond to challenging work environments. Consequently, the integration of artificial nociceptors holds considerable importance in enhancing the capabilities of humanoid robots. Low-dimensional Hybrid organic–inorganic Perovskites (HOIPs) show promise in emulating biological neurons owing to their inherent ion migration properties. In this work, we present Dion-Jacobson hybrid perovskite (BDAPbI4 (BDA=NH3C4H8NH3)) diffusive memristor on a paper substrate to serve as an artificial nociceptor. The symmetric electrode configuration as Paper/Ag/PCBM/BDAPbI4/PMMA/Ag demonstrates low operating voltage diffusive memristor with an ON/OFF ratio of ∼103. The surface investigation of device before top electrode deposition via X-ray photoelectron spectroscopy XPS and electrical characteristics of the complete device reveal the interplay between Schottky barrier at BDAPbI4/Ag interface and conductive filament formation/rupture within active layer as the origin of the abrupt resistive switching. The characteristics of the diffusive memristor resemble those of biological nociceptors, displaying sensitivity to external stimuli and key attributes such as threshold response, lack of adaptation, and relaxation. These findings underscore the potential application of Dion-Jacobson hybrid perovskites (BDAPbI4) as diffusive memristors in future neuromorphic intelligence systems.
[Display omitted]
•Paper based artificial nociceptor devices are idel for green electronics.•Dion Jacobson hybrid perovskite is an excellent choice as resistive switching meadim.•We show the resistance switching ratio ∼103 at low operating voltage.•The complex interplay between Schottky emission and formation/rupture of conducting filament is the origin of resistive switching.•Devices show threshold response, lack of adaptation, and relaxation, analogues to the biological nociceptor. |
ArticleNumber | 115382 |
Author | Lokhandvala, Aziz Andola, Bhawana Tripathi, Brijesh Solanki, Ankur Kumar Srivastava, Yogesh Khemnani, Manish Srivastava, Amar Thakkar, Parth |
Author_xml | – sequence: 1 givenname: Manish surname: Khemnani fullname: Khemnani, Manish organization: Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India – sequence: 2 givenname: Parth surname: Thakkar fullname: Thakkar, Parth organization: Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India – sequence: 3 givenname: Aziz surname: Lokhandvala fullname: Lokhandvala, Aziz organization: Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India – sequence: 4 givenname: Bhawana surname: Andola fullname: Andola, Bhawana organization: Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India – sequence: 5 givenname: Brijesh surname: Tripathi fullname: Tripathi, Brijesh organization: Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India – sequence: 6 givenname: Yogesh surname: Kumar Srivastava fullname: Kumar Srivastava, Yogesh organization: Department of Physics, Indian Institute of Technology Hyderabad, Kandi, Sangareddy, Telangana 502284, India – sequence: 7 givenname: Amar surname: Srivastava fullname: Srivastava, Amar organization: Department of Physics, School of Chemical Engineering and Physical Sciences, Lovely Professional University, Phagwara, Punjab 144411, India – sequence: 8 givenname: Ankur surname: Solanki fullname: Solanki, Ankur email: Ankur.Solanki@sot.pdpu.ac.in organization: Department of Physics, School of Energy Technology, Pandit Deendayal Energy University, Gandhinagar, Gujarat 382426, India |
BookMark | eNp9kMtOwzAQRS1UJNrCB7DLD6TYsRPHYlVaHkWVYAFry48JuIS4sk2l_j2uyopFRxrN3ZzRzJmg0eAHQOia4BnBpLnZzOKgZhWu2IyQmrbVGRqTltOS4kaM0BiLipWsYvwCTWLcYIwp5XyM5N1y_qpXrFg6PxTPyngdc_jc6-BssYXgd_HLJSi1imALFZLrnHGqLwZvnIFt8iEWmdDOW_gIyirdQxF_dExBJbhE553qI1z9zSl6f7h_WzyV65fH1WK-Lk0leCo5tm0jcmnKNHCshOGEGahFKzpLm1pUhuuqoyY30KbDGjqG67praa2xoFNEjntN8DEG6OQ2uG8V9pJgeTAkNzIbkgdD8mgoM_wfY1xSKYvIp7v-JHl7JCG_tHMQZDQOBgPWBTBJWu9O0L8bqYNj |
CitedBy_id | crossref_primary_10_1063_5_0248203 |
Cites_doi | 10.1109/LRA.2023.3268624 10.1039/D3TC03692H 10.1021/acs.jpclett.9b03181 10.1063/5.0082538 10.1021/acsami.1c21036 10.1021/acsaelm.3c01038 10.1109/TED.2023.3236588 10.1039/D3MH01766D 10.3390/polym14020242 10.1039/C8NR08721K 10.1039/D2TC03355K 10.1109/16.543035 10.1039/C4EE01995D 10.1039/D2NR05257A 10.1002/aisy.202000085 10.1002/adma.201004692 10.3390/electronics11060894 10.1016/j.joule.2018.11.026 10.1016/j.proeng.2012.09.291 10.1039/D1TB02578C 10.1039/C6NR02172G 10.1038/s41378-022-00390-2 10.1038/s41467-017-02572-3 10.1021/acsami.1c06278 10.1021/acsami.4c01364 10.1021/acs.jpclett.1c02105 10.1021/acsami.2c16481 10.1109/JSSC.2018.2880918 10.1016/j.conb.2010.03.007 10.3390/nano12234206 10.1002/pssr.201105247 10.1016/j.neuron.2007.07.016 10.1088/1402-4896/acae49 10.1002/adma.202310704 10.1002/aelm.202201006 10.1002/adma.201902434 10.1039/D3NH00505D 10.1039/C6TA05055G 10.1145/216585.216588 10.1038/s41378-021-00305-7 10.1002/adma.201805454 10.1021/acsnano.3c07384 10.1016/j.physleta.2021.127800 10.1109/JSSC.2016.2616357 10.1021/nl904092h 10.1021/acsenergylett.1c00129 10.1002/adma.202205258 10.1002/solr.201900090 |
ContentType | Journal Article |
Copyright | 2024 Elsevier B.V. |
Copyright_xml | – notice: 2024 Elsevier B.V. |
DBID | AAYXX CITATION |
DOI | 10.1016/j.sna.2024.115382 |
DatabaseName | CrossRef |
DatabaseTitle | CrossRef |
DatabaseTitleList | |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1873-3069 |
ExternalDocumentID | 10_1016_j_sna_2024_115382 S0924424724003765 |
GroupedDBID | --K --M -~X .~1 0R~ 123 1B1 1RT 1~. 1~5 4.4 457 4G. 5VS 7-5 71M 8P~ 9JN AABNK AACTN AAEDT AAEDW AAIAV AAIKJ AAKOC AALRI AAOAW AAQFI AARLI AAXUO ABMAC ABNEU ACDAQ ACFVG ACGFS ACIWK ACRLP ADBBV ADECG ADEZE ADTZH AEBSH AECPX AEKER AFKWA AFTJW AFZHZ AGHFR AGUBO AGYEJ AHHHB AHJVU AIEXJ AIKHN AITUG AIVDX AJOXV AJSZI ALMA_UNASSIGNED_HOLDINGS AMFUW AMRAJ AXJTR BJAXD BKOJK BLXMC CS3 EBS EFJIC EO8 EO9 EP2 EP3 F5P FDB FIRID FLBIZ FNPLU FYGXN G-Q GBLVA IHE J1W JJJVA KOM MO0 N9A O-L O9- OAUVE OGIMB OZT P-8 P-9 P2P PC. Q38 RNS ROL RPZ SDF SDG SDP SES SEW SPC SPCBC SPD SSK SSQ SST SSZ T5K TN5 YK3 ~G- AAQXK AATTM AAXKI AAYWO AAYXX ABFNM ABWVN ABXDB ACNNM ACRPL ADMUD ADNMO AEIPS AFJKZ AFXIZ AGCQF AGQPQ AGRNS AIIUN AJQLL ANKPU APXCP ASPBG AVWKF AZFZN BNPGV CITATION EJD FEDTE FGOYB G-2 HMU HVGLF HZ~ LY7 M36 M41 R2- SCB SCH SET SSH WUQ |
ID | FETCH-LOGICAL-c297t-70d869999b34be70a9c714ce5989fd36592c7b2f3c2f3e36f0bef4055f835b093 |
IEDL.DBID | .~1 |
ISSN | 0924-4247 |
IngestDate | Tue Jul 01 02:24:58 EDT 2025 Thu Apr 24 23:08:43 EDT 2025 Sat May 25 15:41:36 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Keywords | Artificial Nociceptor Resistive Switching Memristor Dion-Jacobson phase Hybrid Perovskite Biodegradable Substrate |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c297t-70d869999b34be70a9c714ce5989fd36592c7b2f3c2f3e36f0bef4055f835b093 |
ParticipantIDs | crossref_primary_10_1016_j_sna_2024_115382 crossref_citationtrail_10_1016_j_sna_2024_115382 elsevier_sciencedirect_doi_10_1016_j_sna_2024_115382 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2024-08-01 2024-08-00 |
PublicationDateYYYYMMDD | 2024-08-01 |
PublicationDate_xml | – month: 08 year: 2024 text: 2024-08-01 day: 01 |
PublicationDecade | 2020 |
PublicationTitle | Sensors and actuators. A. Physical. |
PublicationYear | 2024 |
Publisher | Elsevier B.V |
Publisher_xml | – name: Elsevier B.V |
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SSID | ssj0003377 |
Score | 2.4578254 |
Snippet | With the current evolution in artificial intelligence technology, biodegradable biomimetic devices are essential to execute increasingly complicated tasks and... |
SourceID | crossref elsevier |
SourceType | Enrichment Source Index Database Publisher |
StartPage | 115382 |
SubjectTerms | Artificial Nociceptor Biodegradable Substrate Dion-Jacobson phase Hybrid Perovskite Memristor Resistive Switching |
Title | BDAPbI4 Dion Jacobson hybrid perovskite-based artificial nociceptors on biodegradable substrate |
URI | https://dx.doi.org/10.1016/j.sna.2024.115382 |
Volume | 373 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1LS8NAEF5KvehBfGJ9lD14EtYm2W02e6ytpa1YBC30FrLZDVYkLU0VvPjbnclDK6gHDzkk7EDyZfebSXbmG0LODawC6Xous74TM_B4HlNcREwGPJGuMrHjYqHw7dgfTMRo2p7WSLeqhcG0ypL7C07P2bq80irRbC1ms9a9A58OwhMSsyBhmWChuRASZ_nl-1eaB-d590UczHB0tbOZ53hlKUoPeQKIo51r8f3km9b8TX-HbJeBIu0U97JLajbdI1tr8oH7JLzqde70UNAegEtHwG3YDJw-vmEVFkUF8NcMf84ydFWG4mMVehE0hVeC-SzzZUbBQs_mBkUjDNZR0Qy4JNesPSCT_vVDd8DKhgks9pRcMemYwIeIT2kutJVOpGLpCiy0ClRiOO6gxlJ7CY_hsNxPHG0TiNjaCcRh2lH8kNTTeWqPCA20kkYb60kbAKpRBACryE2E7ysfvqkaxKmgCuNSTRybWjyHVdrYUwjohohuWKDbIBefJotCSuOvwaLCP_w2H0Kg-t_Njv9ndkI28axI7Dsl9dXyxZ5BsLHSzXw2NclGZ3gzGH8A9_LSCw |
linkProvider | Elsevier |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwnV1NT9tAEB2FcIAeEC2g8tF2Dz0hrWJ7117vMSRFSYAIiUTitvJ612qqykEkReLfM-MPBBJw6MEXe0eyn3ffjL0zbwB-OlwFKoxC7pMg5-jxIq6FzLhKRaFC7fIgpELhq2kymsvJbXzbgUFbC0NplQ3315xesXVzpteg2btbLHo3AX46yEgqyoLEZRJvwCapU8Vd2OyPL0bTZ0IWomrASOM5GbSbm1Wa16ok9aFIInfElRzfW-7phcs534WdJlZk_fp2PkPHl1_g0wsFwT0wZ8P-tR1LNkR82QTpjfqBs9-PVIjFSAT8YUX_Zzl5K8foyWrJCFbiW6GUluX9iqGFXSwd6UY4KqViK6STSrZ2H-bnv2aDEW96JvA80mrNVeDSBIM-bYW0XgWZzlUoqdYq1YUTtImaKxsVIsfDi6QIrC8waIsLDMVsoMUBdMtl6b8CS61WzjofKZ9KqbIMMdZZWMgk0Ql-Vh1C0EJl8kZQnPpa_DVt5tgfg-gaQtfU6B7C6bPJXa2m8dFg2eJvXk0Jg2z_vtnR_5n9gK3R7OrSXI6nF8ewTVfqPL8T6K7v__lvGHus7fdmbj0BPHDUvA |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=BDAPbI4+Dion+Jacobson+hybrid+perovskite-based+artificial+nociceptors+on+biodegradable+substrate&rft.jtitle=Sensors+and+actuators.+A.+Physical.&rft.au=Khemnani%2C+Manish&rft.au=Thakkar%2C+Parth&rft.au=Lokhandvala%2C+Aziz&rft.au=Andola%2C+Bhawana&rft.date=2024-08-01&rft.pub=Elsevier+B.V&rft.issn=0924-4247&rft.eissn=1873-3069&rft.volume=373&rft_id=info:doi/10.1016%2Fj.sna.2024.115382&rft.externalDocID=S0924424724003765 |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0924-4247&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0924-4247&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0924-4247&client=summon |