Reconfigurable field effect transistors: A technology enablers perspective

• Published in: Solid-state electronics Vol. 194; p. 108381
• Main Authors: Mikolajick, T., Galderisi, G., Rai, S., Simon, M., Böckle, R., Sistani, M., Cakirlar, C., Bhattacharjee, N., Mauersberger, T., Heinzig, A., Kumar, A., Weber, W.M., Trommer, J.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.08.2022
• Subjects: Applications; Circuits; CMOS; Electrostatic doping; Reconfigurable transistors; Review; RFET; SBFET; Schottky Junction; TFET; Tunneling; Electrostatic doping; CMOS; Applications; RFET; Circuits; SBFET; TFET; Reconfigurable transistors; Tunneling; Review; Schottky Junction
• ISSN: 0038-1101
• DOI: 10.1016/j.sse.2022.108381

[Display omitted] •A review providing a comprehensive view on reconfigurable transistors, from both the device and the circuit level.•Five basic principles, which we call technology enablers, that all reconfigurable transistors need to yield the desired functionality.•A new view on established class...