Investigation of alternative window materials for GaAs solar cells
The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch...
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| Published in | IEEE transactions on electron devices Vol. 40; no. 4; pp. 705 - 711 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
New York, NY
IEEE
01.04.1993
Institute of Electrical and Electronics Engineers |
| Subjects | |
| Online Access | Get full text |
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| Abstract | The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggests using a window material with and indirect bandgap energy greater than 2.0 eV, a thickness of less than 0.05 mu m, and a lattice mismatch of less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al/sub 0.7/Ga/sub 0.3/As, Na/sub 2/S, and ZnSe/Na/sub 2/S windows. The Al/sub 0.7/Ga/sub 0.3/As and Na/sub 2/S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10/sup 5/ cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na/sub 2/S.< > |
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| AbstractList | The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggests using a window material with and indirect bandgap energy greater than 2.0 eV, a thickness of less than 0.05 mu m, and a lattice mismatch of less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al/sub 0.7/Ga/sub 0.3/As, Na/sub 2/S, and ZnSe/Na/sub 2/S windows. The Al/sub 0.7/Ga/sub 0.3/As and Na/sub 2/S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10/sup 5/ cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na/sub 2/S.< > The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggests using a window material with and indirect bandgap energy greater than 2.0 eV, a thickness of less than 0.05 mum, and a lattice mismatch of less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al(0.7)Ga(0.3)As, Na(2)S, and ZnSe/Na(2)S windows. The Al(0.7)Ga(0.3)As and Na(2)S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10(5) cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na(2)S The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggest using a window material with an indirect bandgap energy greater than 2.0 eV, a 1 of less than 0.05 [mu]m, and a lattice mismatch less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al[sub 0.7]Ga[sub 0.3]As and Na[sub 2]S, and ZnSe/Na[sub 2]S windows. The Al[sub 0.7]Ga[sub 0.3]As and Na[sub 2]S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10[sup 5] cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na[sub 2]S. The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggest using a window material with an indirect bandgap energy greater than 2.0 eV, a thickness of less than 0.05 mu m, and a lattice mismatch less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al sub(0.7)Ga sub(0.3)As, Na sub(2)S, and ZnSe/Na sub(2)S windows. The Al sub(0.7)Ga sub(0.3)As and Na sub(2)S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10 super(5) cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na sub(2)S. |
| Author | DeSalvo, G.C. Barnett, A.M. |
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| Keywords | Solar cell Gallium Arsenides Surface recombination Optical coating Experimental study Comparative study Optimization Passivation Surface |
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| References | ref35 ref13 ref37 ref15 vendura (ref25) 1979 ref36 ref14 ref31 ref33 ref11 ref32 ref10 ref2 ref1 ref39 ref17 ref38 ref16 ref19 gillander (ref23) 1987 fahrenbruch (ref20) 1983 knobloch (ref30) 1988 (ref22) 0 ref46 ref45 ref26 ref47 ref42 fahrenbruch (ref34) 1983 ref41 ref44 ref43 fonash (ref18) 1981 blakeslee (ref12) 1985 ref28 ref27 ref29 ref8 ref7 hecht (ref21) 1979 ref9 ref4 ref3 iles (ref24) 1987 ref6 spindt (ref5) 1990; 90 15 ref40 |
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| SubjectTerms | 140501 - Solar Energy Conversion- Photovoltaic Conversion ALKALI METAL COMPOUNDS Applied sciences CHALCOGENIDES DESIGN DIMENSIONS DIRECT ENERGY CONVERTERS EFFICIENCY Energy ENERGY GAP Exact sciences and technology FABRICATION Gallium arsenide GALLIUM ARSENIDE SOLAR CELLS Lattices MATERIALS Natural energy Optical materials OXYGEN COMPOUNDS PASSIVATION PHOTOELECTRIC CELLS Photonic band gap PHOTOVOLTAIC CELLS Photovoltaic conversion QUANTUM EFFICIENCY Radiative recombination SELENIDES SELENIUM COMPOUNDS SODIUM COMPOUNDS SODIUM SULFATES SOLAR CELLS Solar cells. Photoelectrochemical cells SOLAR ENERGY SOLAR EQUIPMENT Spontaneous emission SULFATES SULFUR COMPOUNDS Surface treatment THICKNESS ZINC COMPOUNDS ZINC SELENIDES |
| Title | Investigation of alternative window materials for GaAs solar cells |
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