Investigation of alternative window materials for GaAs solar cells
The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch...
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Published in | IEEE transactions on electron devices Vol. 40; no. 4; pp. 705 - 711 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.04.1993
Institute of Electrical and Electronics Engineers |
Subjects | |
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Abstract | The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggests using a window material with and indirect bandgap energy greater than 2.0 eV, a thickness of less than 0.05 mu m, and a lattice mismatch of less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al/sub 0.7/Ga/sub 0.3/As, Na/sub 2/S, and ZnSe/Na/sub 2/S windows. The Al/sub 0.7/Ga/sub 0.3/As and Na/sub 2/S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10/sup 5/ cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na/sub 2/S.< > |
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AbstractList | The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggests using a window material with and indirect bandgap energy greater than 2.0 eV, a thickness of less than 0.05 mu m, and a lattice mismatch of less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al/sub 0.7/Ga/sub 0.3/As, Na/sub 2/S, and ZnSe/Na/sub 2/S windows. The Al/sub 0.7/Ga/sub 0.3/As and Na/sub 2/S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10/sup 5/ cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na/sub 2/S.< > The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggests using a window material with and indirect bandgap energy greater than 2.0 eV, a thickness of less than 0.05 mum, and a lattice mismatch of less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al(0.7)Ga(0.3)As, Na(2)S, and ZnSe/Na(2)S windows. The Al(0.7)Ga(0.3)As and Na(2)S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10(5) cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na(2)S The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggest using a window material with an indirect bandgap energy greater than 2.0 eV, a 1 of less than 0.05 [mu]m, and a lattice mismatch less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al[sub 0.7]Ga[sub 0.3]As and Na[sub 2]S, and ZnSe/Na[sub 2]S windows. The Al[sub 0.7]Ga[sub 0.3]As and Na[sub 2]S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10[sup 5] cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na[sub 2]S. The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap energy and thickness. A simplified expression is developed to calculate the effective surface recombination velocity in terms of lattice mismatch between the window layer and GaAs, which suggest using a window material with an indirect bandgap energy greater than 2.0 eV, a thickness of less than 0.05 mu m, and a lattice mismatch less than 0.05%. Experimental GaAs solar cells were fabricated and quantum efficiency measurements were made using no window (bare GaAs), Al sub(0.7)Ga sub(0.3)As, Na sub(2)S, and ZnSe/Na sub(2)S windows. The Al sub(0.7)Ga sub(0.3)As and Na sub(2)S windows are shown to passivate the GaAs surface and reduce the surface recombination velocity to less than 10 super(5) cm/s, while the ZnSe encapsulating layer was used to permanently maintain the temporary surface passivation effects from Na sub(2)S. |
Author | DeSalvo, G.C. Barnett, A.M. |
Author_xml | – sequence: 1 givenname: G.C. surname: DeSalvo fullname: DeSalvo, G.C. organization: Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA – sequence: 2 givenname: A.M. surname: Barnett fullname: Barnett, A.M. organization: Dept. of Electr. Eng., Delaware Univ., Newark, DE, USA |
BackLink | http://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=4696429$$DView record in Pascal Francis https://www.osti.gov/biblio/6545722$$D View this record in Osti.gov |
BookMark | eNqFkU1LAzEQhoNUsK0evHoKIoKHrfnu5liLH4WCl95DzCYa2SY12bb4703Z0qunyWSeeefNZAQGIQYLwDVGE4yRfMRiQhCZ1vgMDDHn00oKJgZgiBCuK0lregFGOX-XVDBGhuBpEXY2d_5Tdz4GGB3UbWdTKOnOwr0PTdzDtS5XXrcZupjgq55lmGOrEzS2bfMlOHelZq-OcQxWL8-r-Vu1fH9dzGfLyhApumrqECYNZYI1zDFdi3I01CLecG4QF9h9WEIxFXXTaMMlRgw1kgosHEEC0TG47WVjsauy8Z01XyaGYE2nBGd8SkiB7ntok-LPtjxMrX0-uNTBxm1WpGaS1Jj_D4oCMXYY-9CDJsWck3Vqk_xap1-FkTqsXGGh-pUX9u4oqrPRrUs6GJ9PDUyUzyCyYDc95q21p-pR4w9-j4eo |
CODEN | IETDAI |
CitedBy_id | crossref_primary_10_1088_0268_1242_22_10_008 crossref_primary_10_1088_1674_4926_35_9_094010 |
Cites_doi | 10.1016/0022-3697(66)90080-1 10.1016/0038-1101(64)90140-6 10.1109/JRPROC.1960.287647 10.1063/1.325074 10.1063/1.1777056 10.1103/PhysRevB.27.985 10.1103/PhysRev.171.903 10.1016/0038-1101(70)90002-X 10.1063/1.1654421 10.1016/0039-6028(83)90550-2 10.1109/ISLC.2006.1708081 10.1063/1.1713601 10.1063/1.102228 10.1016/0169-4332(89)90091-3 10.1063/1.100744 10.1063/1.332322 10.1063/1.341519 10.1007/BF02660192 10.1149/1.2095643 10.1063/1.98946 10.1016/0038-1101(90)90169-F 10.1103/PhysRevB.15.989 10.1109/55.56488 10.1016/0040-6090(71)90007-1 10.1063/1.98877 10.1063/1.337426 10.1116/1.569773 10.1016/0022-0248(89)90468-5 10.1103/PhysRev.87.835 10.1016/0038-1098(89)90342-6 10.1149/1.2123979 10.1116/1.571150 10.1016/0022-0248(82)90322-0 10.1016/0040-6090(85)90170-1 |
ContentType | Journal Article |
Copyright | 1993 INIST-CNRS |
Copyright_xml | – notice: 1993 INIST-CNRS |
DBID | IQODW AAYXX CITATION 7SP 7U5 8FD L7M OTOTI |
DOI | 10.1109/16.202781 |
DatabaseName | Pascal-Francis CrossRef Electronics & Communications Abstracts Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace OSTI.GOV |
DatabaseTitle | CrossRef Solid State and Superconductivity Abstracts Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Technology Research Database Solid State and Superconductivity Abstracts |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering Applied Sciences |
EISSN | 1557-9646 |
EndPage | 711 |
ExternalDocumentID | 6545722 10_1109_16_202781 4696429 202781 |
GroupedDBID | -~X .DC 0R~ 29I 3EH 4.4 5GY 5VS 6IK 97E AAJGR AASAJ ABQJQ ABVLG ACGFO ACGFS ACIWK ACKIV ACNCT AENEX AETIX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ASUFR ATWAV B-7 BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IDIHD IFIPE IFJZH IPLJI JAVBF LAI M43 MS~ O9- OCL P2P RIA RIE RIG RNS TAE TN5 VH1 VJK VOH XFK 08R ABPTK IQODW AAYXX CITATION 7SP 7U5 8FD L7M OTOTI |
ID | FETCH-LOGICAL-c296t-7f012d3464d4f4a86346c3e05d55c0561fbe231368ddac591040d93616f20603 |
IEDL.DBID | RIE |
ISSN | 0018-9383 |
IngestDate | Thu May 18 18:36:46 EDT 2023 Thu Aug 15 22:31:46 EDT 2024 Fri Aug 16 01:59:48 EDT 2024 Fri Aug 23 01:23:26 EDT 2024 Sun Oct 29 17:06:37 EDT 2023 Wed Jun 26 19:25:45 EDT 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 4 |
Keywords | Solar cell Gallium Arsenides Surface recombination Optical coating Experimental study Comparative study Optimization Passivation Surface |
Language | English |
License | CC BY 4.0 |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c296t-7f012d3464d4f4a86346c3e05d55c0561fbe231368ddac591040d93616f20603 |
Notes | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
PQID | 26153440 |
PQPubID | 23500 |
PageCount | 7 |
ParticipantIDs | proquest_miscellaneous_26153440 pascalfrancis_primary_4696429 proquest_miscellaneous_28492815 ieee_primary_202781 osti_scitechconnect_6545722 crossref_primary_10_1109_16_202781 |
PublicationCentury | 1900 |
PublicationDate | 1993-04-01 |
PublicationDateYYYYMMDD | 1993-04-01 |
PublicationDate_xml | – month: 04 year: 1993 text: 1993-04-01 day: 01 |
PublicationDecade | 1990 |
PublicationPlace | New York, NY |
PublicationPlace_xml | – name: New York, NY – name: United States |
PublicationTitle | IEEE transactions on electron devices |
PublicationTitleAbbrev | TED |
PublicationYear | 1993 |
Publisher | IEEE Institute of Electrical and Electronics Engineers |
Publisher_xml | – name: IEEE – name: Institute of Electrical and Electronics Engineers |
References | ref35 ref13 ref37 ref15 vendura (ref25) 1979 ref36 ref14 ref31 ref33 ref11 ref32 ref10 ref2 ref1 ref39 ref17 ref38 ref16 ref19 gillander (ref23) 1987 fahrenbruch (ref20) 1983 knobloch (ref30) 1988 (ref22) 0 ref46 ref45 ref26 ref47 ref42 fahrenbruch (ref34) 1983 ref41 ref44 ref43 fonash (ref18) 1981 blakeslee (ref12) 1985 ref28 ref27 ref29 ref8 ref7 hecht (ref21) 1979 ref9 ref4 ref3 iles (ref24) 1987 ref6 spindt (ref5) 1990; 90 15 ref40 |
References_xml | – ident: ref36 doi: 10.1016/0022-3697(66)90080-1 – ident: ref29 doi: 10.1016/0038-1101(64)90140-6 – start-page: 331 year: 1987 ident: ref24 publication-title: Proc IEEE Photovoltaic Specialists Conf contributor: fullname: iles – start-page: 147 year: 1981 ident: ref18 publication-title: Solar Cell Device Physics contributor: fullname: fonash – ident: ref19 doi: 10.1109/JRPROC.1960.287647 – ident: ref41 doi: 10.1063/1.325074 – year: 1979 ident: ref25 publication-title: Hughes Aircraft Co Tech Rep contributor: fullname: vendura – ident: ref28 doi: 10.1063/1.1777056 – ident: ref27 doi: 10.1103/PhysRevB.27.985 – ident: ref45 doi: 10.1103/PhysRev.171.903 – year: 0 ident: ref22 – volume: 90 15 start-page: 3 year: 1990 ident: ref5 publication-title: Proc Electrochem Soc (PESODO) contributor: fullname: spindt – start-page: 67 year: 1983 ident: ref34 publication-title: Fundamentals of Solar Cells contributor: fullname: fahrenbruch – ident: ref11 doi: 10.1016/0038-1101(70)90002-X – ident: ref17 doi: 10.1063/1.1654421 – start-page: 289 year: 1987 ident: ref23 publication-title: Proc 19th IEEE Photovoltaic Specialists Conf contributor: fullname: gillander – ident: ref10 doi: 10.1016/0039-6028(83)90550-2 – ident: ref13 doi: 10.1109/ISLC.2006.1708081 – ident: ref46 doi: 10.1063/1.1713601 – ident: ref4 doi: 10.1063/1.102228 – ident: ref9 doi: 10.1016/0169-4332(89)90091-3 – ident: ref32 doi: 10.1016/0039-6028(83)90550-2 – ident: ref8 doi: 10.1063/1.100744 – ident: ref2 doi: 10.1063/1.332322 – ident: ref38 doi: 10.1063/1.341519 – ident: ref35 doi: 10.1007/BF02660192 – ident: ref7 doi: 10.1149/1.2095643 – start-page: 313 year: 1979 ident: ref21 publication-title: Optics contributor: fullname: hecht – ident: ref47 doi: 10.1063/1.98946 – ident: ref33 doi: 10.1016/0038-1101(90)90169-F – ident: ref37 doi: 10.1103/PhysRevB.15.989 – ident: ref40 doi: 10.1109/55.56488 – ident: ref43 doi: 10.1016/0040-6090(71)90007-1 – start-page: 146 year: 1985 ident: ref12 publication-title: Proc IEEE Photovoltaic Specialists Conf contributor: fullname: blakeslee – ident: ref15 doi: 10.1063/1.98877 – ident: ref26 doi: 10.1063/1.337426 – ident: ref3 doi: 10.1116/1.569773 – ident: ref39 doi: 10.1016/0022-0248(89)90468-5 – ident: ref31 doi: 10.1103/PhysRev.87.835 – start-page: 74 year: 1983 ident: ref20 publication-title: Fundamentals of Solar Cells contributor: fullname: fahrenbruch – ident: ref16 doi: 10.1016/0038-1098(89)90342-6 – ident: ref6 doi: 10.1149/1.2123979 – ident: ref1 doi: 10.1116/1.571150 – ident: ref42 doi: 10.1016/0022-0248(82)90322-0 – ident: ref14 doi: 10.1063/1.98946 – ident: ref44 doi: 10.1016/0040-6090(85)90170-1 – start-page: 1165 year: 1988 ident: ref30 publication-title: Proc 8th E C Photovoltaic Solar Energy Conf contributor: fullname: knobloch |
SSID | ssj0016442 |
Score | 1.4708036 |
Snippet | The optimum window material for surface passivation of GaAs solar cells is investigated using theoretical analysis of optical losses due to window bandgap... |
SourceID | osti proquest crossref pascalfrancis ieee |
SourceType | Open Access Repository Aggregation Database Index Database Publisher |
StartPage | 705 |
SubjectTerms | 140501 - Solar Energy Conversion- Photovoltaic Conversion ALKALI METAL COMPOUNDS Applied sciences CHALCOGENIDES DESIGN DIMENSIONS DIRECT ENERGY CONVERTERS EFFICIENCY Energy ENERGY GAP Exact sciences and technology FABRICATION Gallium arsenide GALLIUM ARSENIDE SOLAR CELLS Lattices MATERIALS Natural energy Optical materials OXYGEN COMPOUNDS PASSIVATION PHOTOELECTRIC CELLS Photonic band gap PHOTOVOLTAIC CELLS Photovoltaic conversion QUANTUM EFFICIENCY Radiative recombination SELENIDES SELENIUM COMPOUNDS SODIUM COMPOUNDS SODIUM SULFATES SOLAR CELLS Solar cells. Photoelectrochemical cells SOLAR ENERGY SOLAR EQUIPMENT Spontaneous emission SULFATES SULFUR COMPOUNDS Surface treatment THICKNESS ZINC COMPOUNDS ZINC SELENIDES |
Title | Investigation of alternative window materials for GaAs solar cells |
URI | https://ieeexplore.ieee.org/document/202781 https://search.proquest.com/docview/26153440 https://search.proquest.com/docview/28492815 https://www.osti.gov/biblio/6545722 |
Volume | 40 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1Na9wwEBVtTu2hH9uGuJttRenVW1mSZeuYlqZLoT1tYW9G1sclYIfYJtBfnxlpd9lNQujJxkhgjyTPe9LMG0K-1LrVwbY6906VWMKM51q0wFqdqrk3qmpjUtjvP2r1V_7alJutznbMhfHex-Azv8TbeJbvejvhVlkk6phm_bxmPKVq7Q8MwK0nYfAC1i-wrq2IUMH01wIjEbDjkeuJtVTg0sNKwoBIM4BNQipm8eC_HJ3N5euUxT1EjUKMMblaTmO7tP_uKTj-53e8Ia-2oJNepFnyljzz3Yy8PJAifEe-HQhu9B3tA43n6F3UBae3wNz7WwroNk1YClCX_jQXAx2QGlPc_h_ek_Xlj_X3Vb6tr5BbrtWYVwG8kxNSSSeDNLWCWys8K11ZWmQWofUA_4SqnTO2BGAhmdNCFSpwppg4JSdd3_kzQislgzbWiNJoWbHWMOELx6qqtioYIzLyeWf55jqpaDSRfTDdFKpJ9sjIDE21b7B7OschagAQoKqtxfAfOzYKkF_FeUYWRyO37wysH5iVzsin3Ug2sG7QGqbz_TQ0HJGulOyJFrXUvC7KD4--15y8SLGPGMRzTk7Gm8kvAJ-M7cc4M-8A8mvihQ |
link.rule.ids | 230,315,786,790,802,891,27955,27956,55107 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT9wwELYqeigcaMtDXR7FQlyzOLHjxEeoSrctcFokbpbjxwUpQU1WK_HrmbF3V7yEeooV2VIytjPfl5n5TMhJrRoVbKMy72SJR5gVmeINsFYn68IbWTWxKOzqWk5uxJ_b8nahsx1rYbz3MfnMj7EZY_muszP8VRaJOpZZfwQ3z6pUrLUKGYBjT9LgOexg4F0LGaGcqdMccxFw6DPnE09TgUsHewlTIk0PVgnpOItXX-bobi4-pzruPqoUYpbJ3Xg2NGP78ELD8T_f5AvZXMBOepbWyVfywbdbZOOJGOE2OX8iudG1tAs0RtLbqAxO58DduzkFfJuWLAWwS3-Zs572SI4pBgD6HTK9-Dn9MckWJyxktlByyKoA_slxIYUTQZhaQtNyz0pXlha5RWg8AEAua-eMLQFaCOYUl7kMBZOM75K1tmv9N0IrKYIy1vDSKFGxxjDuc8eqqrYyGMNH5HhpeX2fdDR05B9M6VzqZI8R2UJTrTos7-7jFGmABKhrazEByA5aAvarimJEDp_N3Gow8H7gVmpEjpYzqWHnoDVM67tZrwvEukKwd3rUQhV1Xu69-VxH5NNkenWpL39f_90n6ykTElN6Dsja8G_mDwGtDM33uEofAQYV5dk |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=Investigation+of+alternative+window+materials+for+GaAs+solar+cells&rft.jtitle=IEEE+transactions+on+electron+devices&rft.au=DeSalvo%2C+Gregory+C&rft.au=Barnett%2C+Allen+M&rft.date=1993-04-01&rft.issn=0018-9383&rft.volume=40&rft.issue=4&rft.spage=705&rft.epage=711&rft_id=info:doi/10.1109%2F16.202781&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9383&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9383&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9383&client=summon |