Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

This work describes an experiment on degradation mechanisms of InGaN light-emitting diode (LED) test structures which do not fulfill the requirements of longlife products. We present a combined capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), electroluminescence (EL), and cathodo...

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Published inJournal of applied physics Vol. 99; no. 5
Main Authors Rossi, Francesca, Pavesi, Maura, Meneghini, Matteo, Salviati, Giancarlo, Manfredi, Manfredo, Meneghesso, Gaudenzio, Castaldini, Antonio, Cavallini, Anna, Rigutti, Lorenzo, Strass, Uwe, Zehnder, Ulrich, Zanoni, Enrico
Format Journal Article
LanguageEnglish
Published 01.03.2006
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Abstract This work describes an experiment on degradation mechanisms of InGaN light-emitting diode (LED) test structures which do not fulfill the requirements of longlife products. We present a combined capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), electroluminescence (EL), and cathodoluminescence (CL) study of short-term instabilities of InGaN∕GaN LEDs submitted to low current aging tests at room temperature. In the early stages of the aging tests, the EL and CL characterizations showed an optical power decrease, more prominent at low current levels. The C-V profiles indicated that the stress induced an apparent charge increase, well related to the deep level changes detected by DLTS and to the optical power decrease. It is supposed that the main cause of the degradation is the generation of nonradiative paths, due to the generation/propagation of defects activated by carrier transport.
AbstractList This work describes an experiment on degradation mechanisms of InGaN light-emitting diode (LED) test structures which do not fulfill the requirements of longlife products. We present a combined capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), electroluminescence (EL), and cathodoluminescence (CL) study of short-term instabilities of InGaN∕GaN LEDs submitted to low current aging tests at room temperature. In the early stages of the aging tests, the EL and CL characterizations showed an optical power decrease, more prominent at low current levels. The C-V profiles indicated that the stress induced an apparent charge increase, well related to the deep level changes detected by DLTS and to the optical power decrease. It is supposed that the main cause of the degradation is the generation of nonradiative paths, due to the generation/propagation of defects activated by carrier transport.
Author Pavesi, Maura
Strass, Uwe
Rigutti, Lorenzo
Rossi, Francesca
Cavallini, Anna
Manfredi, Manfredo
Meneghesso, Gaudenzio
Zanoni, Enrico
Meneghini, Matteo
Salviati, Giancarlo
Castaldini, Antonio
Zehnder, Ulrich
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