Identification of Degradation Mechanisms Based on Thermal Characteristics of InGaN/GaN Laser Diodes

• Published in: IEEE journal of selected topics in quantum electronics Vol. 21; no. 6; pp. 165 - 170
• Main Authors: Wen, Peng-Yan, Li, De-Yao, Zhang, Shu-Ming, Liu, Jian-Ping, Zhang, Li-Qun, Zhou, Kun, Feng, Mei-Xin, Tian, Ai-Qin, Zhang, Feng, Zeng, Chang, Yang, Hui
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.11.2015; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Aging; Cooling; Degradation; Degradation mechanisms; Gallium nitride; InGaN/GaN laser diodes (LDs); Materials; Temperature measurement; Thermal characteristics; Thermal resistance; InGaN/GaN laser diodes (LDs); Thermal characteristics; degradation mechanisms
• DOI: 10.1109/JSTQE.2014.2372051
• ISSN: 1077-260X

A method of identifying laser degradation mechanism is established based on thermal characteristic analysis of InGaN/GaN laser diodes (LDs). Both steady and transient thermal characteristics of LDs are calculated by the finite-element analysis method, the results show that thermal resistance and thermal time constant of each layer are determined by the corresponding structure and material. Experiments on thermal characteristics of LDs are carried out, degradation induced heat transport irregularities are localized by comparing the transient cooling curves of the virgin, and degraded LDs and further analyses give more information on degradation mechanisms of the LDs. The results confirm that this identification method is an effective method, which gives specific guidance for the analysis of the laser degradation mechanisms.