APA (7th ed.) Citation

Lin, K., Hou, T., Shieh, J., Lin, J., Chou, C., & Lee, Y. (2011). Electrode dependence of filament formation in HfO2 resistive-switching memory. Journal of applied physics, 109(8), . https://doi.org/10.1063/1.3567915

Chicago Style (17th ed.) Citation

Lin, Kuan-Liang, Tuo-Hung Hou, Jiann Shieh, Jun-Hung Lin, Cheng-Tung Chou, and Yao-Jen Lee. "Electrode Dependence of Filament Formation in HfO2 Resistive-switching Memory." Journal of Applied Physics 109, no. 8 (2011). https://doi.org/10.1063/1.3567915.

MLA (9th ed.) Citation

Lin, Kuan-Liang, et al. "Electrode Dependence of Filament Formation in HfO2 Resistive-switching Memory." Journal of Applied Physics, vol. 109, no. 8, 2011, https://doi.org/10.1063/1.3567915.