APA (7th ed.) Citation

Shin, J., Park, J., Jang, S., Jang, T., & Sang Kim, K. (2013). Metal induced inhomogeneous Schottky barrier height in AlGaN/GaN Schottky diode. Applied physics letters, 102(24), . https://doi.org/10.1063/1.4811756

Chicago Style (17th ed.) Citation

Shin, Jong-Hoon, Jinhong Park, SeungYup Jang, T. Jang, and Kyu Sang Kim. "Metal Induced Inhomogeneous Schottky Barrier Height in AlGaN/GaN Schottky Diode." Applied Physics Letters 102, no. 24 (2013). https://doi.org/10.1063/1.4811756.

MLA (9th ed.) Citation

Shin, Jong-Hoon, et al. "Metal Induced Inhomogeneous Schottky Barrier Height in AlGaN/GaN Schottky Diode." Applied Physics Letters, vol. 102, no. 24, 2013, https://doi.org/10.1063/1.4811756.