Nondestructive Analysis of Buried Interfacial Behaviors of Flux Residue and Their Impact on Interfacial Mechanical Property
Flux materials are ubiquitously utilized in the microelectronics industry during back-end processing. The Cu oxides or organic solderability preservatives present on Cu posts used in flip-chip packages must be removed by flux before solder reflow and die attachment to ensure a quality connection bet...
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Published in | IEEE transactions on components, packaging, and manufacturing technology (2011) Vol. 8; no. 6; pp. 982 - 990 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
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Piscataway
IEEE
01.06.2018
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | Flux materials are ubiquitously utilized in the microelectronics industry during back-end processing. The Cu oxides or organic solderability preservatives present on Cu posts used in flip-chip packages must be removed by flux before solder reflow and die attachment to ensure a quality connection between the substrate and the die. However, flux residues can cause solder bridging, which renders the device useless. These residues must be studied in situ at the buried interface to determine fundamental interactions and how the residues can be eliminated. In this paper, model flux residues were investigated at the surface and the buried epoxy interface with sum frequency generation vibrational spectroscopy. Glutaric acid. served as the model flux, simulating fluxes that use dicarboxylic acids as one of the main components of the fluxing agent. It was found that the flux residues greatly change the buried interface on both Cu and silica surfaces, which affects properties such as adhesion. It was also observed that the fluxes require long washing times before they are completely removed. This paper is a step forward in flux residue analysis and will help the industry better understand molecular-level details of commonly used processes. |
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AbstractList | Flux materials are ubiquitously utilized in the microelectronics industry during back-end processing. The Cu oxides or organic solderability preservatives present on Cu posts used in flip-chip packages must be removed by flux before solder reflow and die attachment to ensure a quality connection between the substrate and the die. However, flux residues can cause solder bridging, which renders the device useless. These residues must be studied in situ at the buried interface to determine fundamental interactions and how the residues can be eliminated. In this paper, model flux residues were investigated at the surface and the buried epoxy interface with sum frequency generation vibrational spectroscopy. Glutaric acid. served as the model flux, simulating fluxes that use dicarboxylic acids as one of the main components of the fluxing agent. It was found that the flux residues greatly change the buried interface on both Cu and silica surfaces, which affects properties such as adhesion. It was also observed that the fluxes require long washing times before they are completely removed. This paper is a step forward in flux residue analysis and will help the industry better understand molecular-level details of commonly used processes. |
Author | Chen, Zhan Wei, Yuying Ulrich, Nathan W. Andre, John S. Xiu, Yonghao Khanna, Kunal |
Author_xml | – sequence: 1 givenname: Nathan W. orcidid: 0000-0003-1763-9268 surname: Ulrich fullname: Ulrich, Nathan W. email: nwulrich@umich.edu organization: Department of Chemistry, University of Michigan, Ann Arbor, MI, USA – sequence: 2 givenname: John S. orcidid: 0000-0003-0033-7677 surname: Andre fullname: Andre, John S. email: joandre@umich.edu organization: Department of Chemistry, University of Michigan, Ann Arbor, MI, USA – sequence: 3 givenname: Kunal orcidid: 0000-0001-5400-1023 surname: Khanna fullname: Khanna, Kunal email: khannak@umich.edu organization: Department of Chemistry, University of Michigan, Ann Arbor, MI, USA – sequence: 4 givenname: Yuying surname: Wei fullname: Wei, Yuying email: yuying.wei@intel.com organization: Intel Corporation, Chandler, AZ, USA – sequence: 5 givenname: Yonghao surname: Xiu fullname: Xiu, Yonghao email: yonghao.xiu@gmail.com organization: Intel Corporation, Chandler, AZ, USA – sequence: 6 givenname: Zhan orcidid: 0000-0001-8687-8348 surname: Chen fullname: Chen, Zhan email: zhanc@umich.edu organization: Department of Chemistry, University of Michigan, Ann Arbor, MI, USA |
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Cites_doi | 10.1021/jp0745135 10.1063/1.1475358 10.1016/S0921-5093(00)01917-1 10.1103/PhysRevLett.80.1533 10.1109/6144.846771 10.1142/S0960313100000174 10.1021/ja809497y 10.1021/la020537l 10.1021/ja071989t 10.1073/pnas.1612893114 10.1021/ja035513v 10.1051/epjconf/20134106009 10.1007/s11664-005-0086-5 10.1039/C5RA24332G 10.1021/ma801155c 10.1109/TCPMT.2015.2452221 10.1126/science.1131536 10.1016/0254-0584(95)80038-7 10.1109/6144.910806 10.1051/epjconf/20134105022 10.1021/jacs.6b11226 10.1016/j.susc.2013.04.013 10.1021/jp013161d 10.1103/PhysRevLett.72.238 10.1039/C7CP00567A 10.1021/jp202416z 10.1021/jp305539v 10.1021/la047223d 10.1109/TADVP.2004.831870 10.1021/acs.analchem.6b04320 10.1021/jp2000249 10.1146/annurev.pc.40.100189.001551 10.1016/j.polymer.2013.02.002 10.1016/S0009-2614(02)01171-5 10.1039/C6CP04155H 10.1109/TCPMT.2011.2173493 10.1016/j.progpolymsci.2010.07.003 10.1021/ma026007d 10.1021/cr9502211 10.1021/ja1048237 10.1021/ma102002j 10.1016/S0142-9612(01)00292-7 10.1149/2.083304jes 10.1103/PhysRevB.59.12632 10.1021/ma301088g 10.1016/S0039-6028(01)01968-9 10.1021/acs.langmuir.7b03098 10.1109/TCPMT.2017.2718562 10.1021/am300854g 10.1021/ja000808j 10.1021/cr040379y 10.1002/cphc.200900138 10.1115/1.2792641 10.1109/6040.909620 10.1021/jp501498h 10.1021/la5048722 10.1021/la300004x 10.1021/jz200791c 10.1115/1.4002741 10.1021/ja060442w 10.1109/101.20777 10.1109/ECTC.2005.1441420 10.1115/1.2792644 10.1126/sciadv.1501630 10.1016/j.cplett.2014.10.035 10.1007/s13758-012-0020-3 10.1039/c4sm00582a 10.1021/ja0390911 10.1063/1.2188388 10.1146/annurev.physchem.53.091801.115126 |
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Snippet | Flux materials are ubiquitously utilized in the microelectronics industry during back-end processing. The Cu oxides or organic solderability preservatives... |
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SubjectTerms | Adhesives Buried interface Computer simulation Dicarboxylic acids flux treatment Fluxes Fluxing Laser beams Measurement by laser beam Microelectronics Nondestructive testing nonlinear optics Preservatives Residues Silicon dioxide Solder bridging Solderability Spectroscopy Substrates Surface treatment |
Title | Nondestructive Analysis of Buried Interfacial Behaviors of Flux Residue and Their Impact on Interfacial Mechanical Property |
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