A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors
The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance. The Weibull distribution is often...
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| Published in | Solid-state electronics Vol. 48; no. 2; pp. 217 - 223 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier Ltd
01.02.2004
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0038-1101 1879-2405 |
| DOI | 10.1016/j.sse.2003.07.001 |
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| Abstract | The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance.
The Weibull distribution is often used to describe the life times of parts and widely applied to characterize the breakdown statistics of solid dielectric samples.
In this study the degradation in the threshold voltage is observed experimentally by operating the MOSFET under different voltage stress conditions. Using Weibull distribution, a new approach is proposed to represent the hot carrier degradation in threshold voltage of MOS transistors. The linear regression method is used to estimate the Weibull parameters and the correlation coefficient is used to confirm the results. The observed and the estimated values of the degradation are compared and found to be in good agreement with each other. The results obtained can be easily applied to SPICE NMOS and PMOS device models, therefore the method proposed will be helpful to estimate the influence of hot carrier degradation to the performance of any analog circuit topology. |
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| AbstractList | The importance of long term reliability in MOS VLSI circuits is becoming an important subject because of the increasing densities of VLSI chips. Hot carrier effects cause noncatastrophic failures which develop gradually over time and change the circuit performance.
The Weibull distribution is often used to describe the life times of parts and widely applied to characterize the breakdown statistics of solid dielectric samples.
In this study the degradation in the threshold voltage is observed experimentally by operating the MOSFET under different voltage stress conditions. Using Weibull distribution, a new approach is proposed to represent the hot carrier degradation in threshold voltage of MOS transistors. The linear regression method is used to estimate the Weibull parameters and the correlation coefficient is used to confirm the results. The observed and the estimated values of the degradation are compared and found to be in good agreement with each other. The results obtained can be easily applied to SPICE NMOS and PMOS device models, therefore the method proposed will be helpful to estimate the influence of hot carrier degradation to the performance of any analog circuit topology. |
| Author | Kuntman, Hakan Kaçar, Firat Ardalı, Arda Kuntman, Ayten |
| Author_xml | – sequence: 1 givenname: Ayten surname: Kuntman fullname: Kuntman, Ayten email: akuntman@istanbul.edu.tr organization: Department of Electrical and Electronics Engineering, Engineering Faculty, Istanbul University, 34850 Avcılar, Istanbul, Turkey – sequence: 2 givenname: Arda surname: Ardalı fullname: Ardalı, Arda email: aardali@istanbul.edu.tr organization: Department of Electrical and Electronics Engineering, Engineering Faculty, Istanbul University, 34850 Avcılar, Istanbul, Turkey – sequence: 3 givenname: Hakan surname: Kuntman fullname: Kuntman, Hakan email: kuntman@ehb.itu.edu.tr organization: Department of Electronics and Communication Engineering, Faculty of Electrical and Electronics Engineering, Istanbul Technical University, 34469, Maslak, Istanbul, Turkey – sequence: 4 givenname: Firat surname: Kaçar fullname: Kaçar, Firat email: fkacar@istanbul.edu.tr organization: Department of Electrical and Electronics Engineering, Engineering Faculty, Istanbul University, 34850 Avcılar, Istanbul, Turkey |
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| Cites_doi | 10.1109/16.887012 10.1109/16.563366 10.1016/S0921-4526(99)00363-4 10.1080/002072198134300 10.1109/101.933789 10.1109/16.293346 10.1109/CEIDP.1999.804618 10.1109/24.784277 10.1080/00207219508926156 10.1109/ICM.2001.997482 10.1016/0038-1101(95)00414-9 10.1016/0951-8320(94)90028-0 10.1016/0167-9317(93)90168-5 10.1109/24.326426 10.1109/24.294993 10.1109/24.877341 10.1109/16.259624 |
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| Keywords | Hot carriers Measurement and evaluation Weibull distribution Modeling and simulation of solid-state devices and processes MOS transistors |
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| SubjectTerms | Hot carriers Measurement and evaluation Modeling and simulation of solid-state devices and processes MOS transistors Weibull distribution |
| Title | A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors |
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