APA (7th ed.) Citation

Kuntman, A., Ardalı, A., Kuntman, H., & Kaçar, F. (2004). A Weibull distribution-based new approach to represent hot carrier degradation in threshold voltage of MOS transistors. Solid-state electronics, 48(2), 217-223. https://doi.org/10.1016/j.sse.2003.07.001

Chicago Style (17th ed.) Citation

Kuntman, Ayten, Arda Ardalı, Hakan Kuntman, and Firat Kaçar. "A Weibull Distribution-based New Approach to Represent Hot Carrier Degradation in Threshold Voltage of MOS Transistors." Solid-state Electronics 48, no. 2 (2004): 217-223. https://doi.org/10.1016/j.sse.2003.07.001.

MLA (9th ed.) Citation

Kuntman, Ayten, et al. "A Weibull Distribution-based New Approach to Represent Hot Carrier Degradation in Threshold Voltage of MOS Transistors." Solid-state Electronics, vol. 48, no. 2, 2004, pp. 217-223, https://doi.org/10.1016/j.sse.2003.07.001.