Direct Patterning of Self Assembled Nano-Structures of Block Copolymers via Electron Beam Lithography
This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50nm) and electron beam writing (>50nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacr...
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Published in | Macromolecular research Vol. 13; no. 5; pp. 435 - 440 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
한국고분자학회
01.10.2005
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Subjects | |
Online Access | Get full text |
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