Efficient silicon quantum dots light emitting diodes with an inverted device structure

• Published in: Journal of materials chemistry. C, Materials for optical and electronic devices Vol. 4; no. 4; pp. 673 - 677
• Main Authors: Yao, Li, Yu, Ting, Ba, Lixiang, Meng, Hu, Fang, Xin, Wang, Yilun, Li, Lei, Rong, Xin, Wang, Suo, Wang, Xinqiang, Ran, Guangzhao, Pi, Xiaodong, Qin, Guogang
• Format: Journal Article
• Language: English
• Published: 01.01.2016
• ISSN: 2050-7526; 2050-7534
• DOI: 10.1039/c5tc03064a

We use silicon quantum dots (SiQDs) with an average diameter of 2.6 ± 0.5 nm as the light emitting material and fabricate inverted structure light emitting diodes (SiQD-LEDs) with bottom cathodes. ZnO nanoparticles with high electron mobility, a deep valence band edge, and robust features to resist dissolving by the SiQD solvent were used as the electron transport layer. 1,1-Bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) with high hole transport mobility and a high lowest unoccupied molecular orbital level was used as the hole transport layer. Poly(ethylene imine) (PEI) modified indium-tin oxide (ITO) was used as the low work function (∼3.1 eV) cathode and MoO 3 /Al as the high work function anode. Electroluminescence of the SiQD-LEDs is mainly from the SiQDs with a peak located at ∼700 nm. The maximum external quantum efficiencies of the SiQD-LEDs are 2.7%. SiQDs with an average diameter of 2.6 ± 0.5 nm are used as the light emitting material in high-efficiency inverted structure light emitting diodes.