Realization of 256--278 nm AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Si Substrates Using Epitaxial Lateral Overgrowth AlN Templates

We demonstrated 256--278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epitaxial lateral overgrowth (ELO) AlN templates. A 4-μm-thick ELO-AlN layer grown in a striped pattern along the $\langle 10\bar{1}0\rangle$ direction can be coalesced successfully....

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Bibliographic Details
Published inApplied physics express Vol. 4; no. 9; pp. 092104 - 092104-3
Main Authors Mino, Takuya, Hirayama, Hideki, Takano, Takayoshi, Tsubaki, Kenji, Sugiyama, Masakazu
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.09.2011
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Summary:We demonstrated 256--278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epitaxial lateral overgrowth (ELO) AlN templates. A 4-μm-thick ELO-AlN layer grown in a striped pattern along the $\langle 10\bar{1}0\rangle$ direction can be coalesced successfully. Low-threading-dislocation-density AlN templates were achieved on Si wafers by a combination of the ELO and NH 3 pulsed-flow multilayer growth methods. Single-peaked AlGaN LEDs with wavelengths shorter than 280 nm were achieved by fabricating them on ELO-AlN templates on Si. These low-cost AlGaN-based DUV LEDs on Si substrates are expected to be integrated on the same chips with Si-based electrical circuits.
Bibliography:Differential interference contrast (DIC) and bird's-eye-view SEM images of ELO-AlN templates grown on trench-patterned AlN/Si with the direction of stripes formed along (a) $\langle 11\bar{2}0\rangle$ and (b) $\langle 10\bar{1}0\rangle$ of AlN. Cross-sectional (a) SEM and (b) TEM images of ELO-AlN templates grown on $\langle 10\bar{1}0\rangle$-trench-patterned AlN/Si. (a) (0002) and (b) ($10\bar{1}2$) X-ray diffraction $\omega$-scan rocking curves for the 4-μm-thick ELO-AlN template and 300-nm-thick AlN layer before the ELO process. Schematic structure of an AlGaN-based DUV LED fabricated on the $\langle 10\bar{1}0\rangle$-trench-patterned ELO-AlN/Si template on a Si substrate. Electroluminescence spectra and a typical $I$--$V$ curve of the AlGaN-based DUV LEDs on ELO-AlN templates on Si measured at room temperature.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.4.092104