Compensating Pixel Circuit Driving AMOLED Display With a-IGZO TFTs

• Published in: IEEE electron device letters Vol. 34; no. 9; pp. 1166 - 1168
• Main Authors: Lin, Chih-Lung, Chang, Wen-Yen, Hung, Chia-Che
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.09.2013; Institute of Electrical and Electronics Engineers
• Subjects: Active matrix organic light emitting diodes; Active-matrix organic light-emitting diode (AMOLED); amorphous indium-gallium-zinc oxide (a-IGZO); Applied sciences; Arrays; Degradation; Display; Electronics; Exact sciences and technology; Optoelectronic devices; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thin film transistors; thin-film transistor (TFT); Threshold voltage; Transistors; Voltage threshold; Amorphous material; thin-film transistor (TFT); Electric stress; Gallium oxide; Glass; LED displays; Matrix display; Indium oxide; Active matrix; amorphous indium-gallium-zinc oxide (a-IGZO); Optoelectronic device; Organic light emitting diodes; Zinc oxide; Liquid crystal displays; Thin film transistor; Reliability; Flat panel displays; Active-matrix organic light-emitting diode (AMOLED); Organic electronics
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2013.2271783

This letter presents a novel active-matrix organic light-emitting diode (AMOLED) pixel circuit that uses amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a bottom-gate structure to compensate for the threshold voltage shift of the TFT. An a-IGZO TFT driven AMOLED display (70 × 70 pixels) on a glass substrate is fabricated and its reliability is evaluated under electrical stress.