A 28-nm 10-b 2.2-GS/s 18.2-mW Relative-Prime Time-Interleaved Sub-Ranging SAR ADC With On-Chip Background Skew Calibration
This article presents a relative-prime-based time-interleaved (RP TI) sub-ranging successive-approximation register (SAR) analog-to-digital converter (ADC) with on-chip background skew calibration. The proposed calibration aligns the sampling time of every fine ADC (F-ADC) to that of a particular co...
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Published in | IEEE journal of solid-state circuits Vol. 56; no. 9; pp. 2691 - 2700 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.09.2021
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | This article presents a relative-prime-based time-interleaved (RP TI) sub-ranging successive-approximation register (SAR) analog-to-digital converter (ADC) with on-chip background skew calibration. The proposed calibration aligns the sampling time of every fine ADC (F-ADC) to that of a particular coarse ADC (C-ADC) that works as a reference ADC. To avoid the unwanted calibration tone from the reference ADC, the C-ADC is also time-interleaved to make all samples undergo the same kick back. By setting the numbers of the time-interleaved channels of the C-ADCs and F-ADCs in a relative-prime relationship, every C-ADC can be evenly shared by every F-ADC; thus, the timing skews between the interleaved sub-ADCs are calibrated by adjusting the sampling edges of every F-ADC to the particular C-ADC working as a reference ADC. An 18-channel TI 10-bit 2.2-GS/s SAR ADC was implemented as a prototype with 28-nm CMOS. Owing to the proposed on-chip background skew calibration, the peak tone by skew was reduced by 23 dB from −40 to −63 dB, which corresponds to the residual skew reduction from 1.6 ps to 113 fs near the Nyquist input. Thus, the prototype ADC achieved a spurious free dynamic range (SFDR) over 52.8 dB and a signal-to-noise-and-distortion ratio (SNDR) over 44.9 dB with 18.2-mW power consumption, which leads to a Walden figure-of-merit (FoM) of 57.8 fJ/conversion-step. |
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AbstractList | This article presents a relative-prime-based time-interleaved (RP TI) sub-ranging successive-approximation register (SAR) analog-to-digital converter (ADC) with on-chip background skew calibration. The proposed calibration aligns the sampling time of every fine ADC (F-ADC) to that of a particular coarse ADC (C-ADC) that works as a reference ADC. To avoid the unwanted calibration tone from the reference ADC, the C-ADC is also time-interleaved to make all samples undergo the same kick back. By setting the numbers of the time-interleaved channels of the C-ADCs and F-ADCs in a relative-prime relationship, every C-ADC can be evenly shared by every F-ADC; thus, the timing skews between the interleaved sub-ADCs are calibrated by adjusting the sampling edges of every F-ADC to the particular C-ADC working as a reference ADC. An 18-channel TI 10-bit 2.2-GS/s SAR ADC was implemented as a prototype with 28-nm CMOS. Owing to the proposed on-chip background skew calibration, the peak tone by skew was reduced by 23 dB from −40 to −63 dB, which corresponds to the residual skew reduction from 1.6 ps to 113 fs near the Nyquist input. Thus, the prototype ADC achieved a spurious free dynamic range (SFDR) over 52.8 dB and a signal-to-noise-and-distortion ratio (SNDR) over 44.9 dB with 18.2-mW power consumption, which leads to a Walden figure-of-merit (FoM) of 57.8 fJ/conversion-step. |
Author | Chang, Dong-Jin Choi, Michael Ryu, Seung-Tak |
Author_xml | – sequence: 1 givenname: Dong-Jin orcidid: 0000-0002-6008-1338 surname: Chang fullname: Chang, Dong-Jin email: youorange@kaist.ac.kr organization: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea – sequence: 2 givenname: Michael surname: Choi fullname: Choi, Michael organization: Samsung Electronics, Hwaseong, South Korea – sequence: 3 givenname: Seung-Tak orcidid: 0000-0002-6947-7785 surname: Ryu fullname: Ryu, Seung-Tak email: stryu@kaist.ac.kr organization: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, Daejeon, South Korea |
BookMark | eNo9kF1PwjAUhhuDiYD-AONNE68LPe22tpc4FTEkGIbBu6UbHYyPDruB0V9vCcab85G873tyng5q2coahG6B9gCo6r8mSdxjlEGPU8GViC5QG8JQEhD8o4XalIIkilF6hTp1vfZrEEhoo58BZpLYHQZKMsx6jAyTfo1B-mk3x1Oz1U15NOTNlTuDZ76QkW2M2xp9NAucHDIy1XZZ2iVOBlM8eIzxvGxWeGJJvCr3-EHnm6WrDtZrN-YLx3pbZs5nVvYaXRZ6W5ubv95F789Ps_iFjCfDUTwYk5wp3hBV5IFc5FwUWUTzPMwCGUkBwLQwjDMheJhFhQQBKlhwUxQyzLlk0SJQUmlFeRfdn3P3rvo8mLpJ19XBWX8yZWEUMh6FSnoVnFW5q-ramSLd-5e1-06BpifE6QlxekKc_iH2nruzpzTG_OtVwCj42F-kx3SF |
CODEN | IJSCBC |
CitedBy_id | crossref_primary_10_1109_TCSI_2021_3122984 crossref_primary_10_1109_TCSII_2023_3335987 crossref_primary_10_1109_TCSII_2022_3160736 crossref_primary_10_1016_j_mejo_2024_106330 crossref_primary_10_1109_TVLSI_2024_3392611 crossref_primary_10_1007_s00034_024_02610_8 crossref_primary_10_3390_electronics13132459 crossref_primary_10_3390_electronics10243173 crossref_primary_10_1002_cta_4133 crossref_primary_10_1109_TCSI_2022_3163431 crossref_primary_10_3390_app122111029 crossref_primary_10_1016_j_dsp_2024_104433 |
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ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2021 |
DBID | 97E RIA RIE AAYXX CITATION 7SP 8FD L7M |
DOI | 10.1109/JSSC.2021.3073976 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE All-Society Periodicals Package (ASPP) 1998-Present IEEE Xplore Digital Library CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Technology Research Database |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Xplore Digital Library url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1558-173X |
EndPage | 2700 |
ExternalDocumentID | 10_1109_JSSC_2021_3073976 9420152 |
Genre | orig-research |
GrantInformation_xml | – fundername: Samsung Research Funding Center of Samsung Electronics grantid: SRFC-IT1502-04 funderid: 10.13039/100004358 |
GroupedDBID | -~X .DC 0R~ 29I 3EH 4.4 41~ 5GY 5VS 6IK 97E AAJGR AASAJ ABQJQ ACGFS ACIWK ACNCT AENEX AETIX AI. AIBXA AKJIK ALLEH ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS EJD F5P HZ~ H~9 IAAWW IBMZZ ICLAB IFIPE IFJZH IPLJI JAVBF LAI M43 O9- OCL P2P PZZ RIA RIE RIG RNS TAE TN5 UKR VH1 AAYXX CITATION 7SP 8FD L7M |
ID | FETCH-LOGICAL-c293t-9fc48dc37fb60cc5b48687112a7e2327735b6f817194d3eff85c3826d4989a903 |
IEDL.DBID | RIE |
ISSN | 0018-9200 |
IngestDate | Thu Oct 10 19:46:04 EDT 2024 Fri Aug 23 00:47:25 EDT 2024 Mon Nov 04 12:06:17 EST 2024 |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 9 |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c293t-9fc48dc37fb60cc5b48687112a7e2327735b6f817194d3eff85c3826d4989a903 |
ORCID | 0000-0002-6947-7785 0000-0002-6008-1338 |
PQID | 2565236598 |
PQPubID | 85482 |
PageCount | 10 |
ParticipantIDs | proquest_journals_2565236598 crossref_primary_10_1109_JSSC_2021_3073976 ieee_primary_9420152 |
PublicationCentury | 2000 |
PublicationDate | 2021-09-01 |
PublicationDateYYYYMMDD | 2021-09-01 |
PublicationDate_xml | – month: 09 year: 2021 text: 2021-09-01 day: 01 |
PublicationDecade | 2020 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | IEEE journal of solid-state circuits |
PublicationTitleAbbrev | JSSC |
PublicationYear | 2021 |
Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
References | ref13 ref15 ref14 ref10 tai (ref22) 2014 ref2 ref1 ref17 ref16 ref19 luo (ref11) 2017 kull (ref28) 2017 greshishchev (ref18) 2010 sung (ref7) 2015 lin (ref12) 2016 ref24 ref23 ref26 ref25 ref20 ref21 ref29 ref8 ref9 ref4 ref3 ref6 ref5 schinkel (ref27) 2007 |
References_xml | – ident: ref2 doi: 10.1109/JSSC.2011.2164961 – ident: ref15 doi: 10.1109/JSSC.2018.2843360 – start-page: 278 year: 2017 ident: ref11 article-title: A 0.014 mm2 10-bit 2GS/s time-interleaved SAR ADC with low-complexity background timing skew calibration publication-title: Proc Symp VLSI Circuits contributor: fullname: luo – ident: ref6 doi: 10.1109/JSSC.2014.2362851 – start-page: 196 year: 2014 ident: ref22 article-title: A 0.85 fJ/conversionstep 10 b 200 kS/s subranging SAR ADC in 40 nm CMOS publication-title: IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers contributor: fullname: tai – ident: ref26 doi: 10.1109/JSSC.2010.2042254 – start-page: 390 year: 2010 ident: ref18 article-title: A 40 GS/s 6b ADC in 65 nm CMOS publication-title: IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers contributor: fullname: greshishchev – ident: ref14 doi: 10.1109/JSSC.2019.2945298 – ident: ref24 doi: 10.1109/TCSII.2018.2822811 – ident: ref20 doi: 10.1109/JSSC.2019.2915583 – ident: ref13 doi: 10.1109/ACCESS.2020.3012699 – ident: ref8 doi: 10.1109/ISSCC.2014.6757481 – ident: ref3 doi: 10.1109/JSSC.1975.1050629 – ident: ref16 doi: 10.1109/TCSII.2016.2530819 – ident: ref19 doi: 10.1109/ISSCC.2014.6757481 – start-page: 474 year: 2017 ident: ref28 article-title: A 10b 1.5GS/s pipelined-SAR ADC with background second-stage common-mode regulation and offset calibration in 14nm CMOS FinFET publication-title: IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers contributor: fullname: kull – ident: ref29 doi: 10.1109/JSSC.2014.2364833 – start-page: 464 year: 2015 ident: ref7 article-title: 26.4 A 21fJ/conv-step 9 ENOB 1.6GS/S 2× time-interleaved FATI SAR ADC with background offset and timing-skew calibration in 45nm CMOS publication-title: IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers contributor: fullname: sung – ident: ref23 doi: 10.1023/A:1008359721539 – ident: ref17 doi: 10.1109/ISSCC.2002.992988 – start-page: 1 year: 2016 ident: ref12 article-title: A 8.2-mW 10-b 1.6-GS/s 4× TI SAR ADC with fast reference charge neutralization and background timing-skew calibration in 16-nm CMOS publication-title: Proc IEEE Symp VLSI Circuits (VLSI-Circuits) contributor: fullname: lin – ident: ref4 doi: 10.1109/JSSC.2011.2143870 – ident: ref21 doi: 10.1109/TCSII.2020.2990910 – ident: ref5 doi: 10.1109/JSSC.2013.2239005 – ident: ref10 doi: 10.1109/JSSC.2018.2793535 – start-page: 314 year: 2007 ident: ref27 article-title: A double-tail latch-type voltage sense amplifier with 18ps setup+hold time publication-title: ISSCC Dig Tech Papers contributor: fullname: schinkel – ident: ref1 doi: 10.1109/TSP.2007.896056 – ident: ref25 doi: 10.1109/JSSC.2015.2413850 – ident: ref9 doi: 10.1109/JSSC.2017.2713523 |
SSID | ssj0014481 |
Score | 2.5093126 |
Snippet | This article presents a relative-prime-based time-interleaved (RP TI) sub-ranging successive-approximation register (SAR) analog-to-digital converter (ADC)... |
SourceID | proquest crossref ieee |
SourceType | Aggregation Database Publisher |
StartPage | 2691 |
SubjectTerms | Analog to digital conversion Analog to digital converters Analog-to-digital converter (ADC) Calibration CMOS Computer architecture digital background calibration Linearity Noise levels Power consumption Prototypes Redundancy Sampling sub-ranging architecture Time-frequency analysis time-interleaved (TI) ADC Timing timing-skew mismatch |
Title | A 28-nm 10-b 2.2-GS/s 18.2-mW Relative-Prime Time-Interleaved Sub-Ranging SAR ADC With On-Chip Background Skew Calibration |
URI | https://ieeexplore.ieee.org/document/9420152 https://www.proquest.com/docview/2565236598 |
Volume | 56 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV07T8MwELaACQbeiPKSByaE09hxEnsshYKQeIiCYItixwFUCAhSkPrruUvSCgEDmwfHsXznu-98L0J2EcNmykZMZFYwqf2MIQpnwhgpcsx2tPjecXYendzI07vwborsT3JhnHNV8JnzcFj58rMXO8SnsraWoK5CELjTsdZ1rtbEYwBmRt0dj8MFBtI3Hkzu6_Zpv98FS1BwDxlaY3mRbzqoaqrySxJX6qW3QM7GG6ujSgbesDSeHf2o2fjfnS-S-QZn0k7NGEtkyhXLZO5b9cEVMupQoVjxTEFGGio8wY777XfKFYyeb2kdJvfh2CV2AKCYK8Kq98Mnl364jILIYVcpLnhP-50r2jns0tvH8oFeFKz78PhKD1I7wKSRAuYO3CfFNDBTM9wquekdXXdPWNOKgVnAAyXTuZUqs0Gcm8i3NjRSRWBqcZHGDjBZHAehiXLFY65lFrg8V6ENwHLJpFY61X6wRmaKl8KtEwqI1ObCN5YLJ1MTauUAJWDVGStzw1WL7I2Jk7zWFTeSylLxdYKUTJCSSUPJFlnBw55MbM65RbbG5EyaO_meALgDqzuCH278_dUmmcW16wiyLTJTvg3dNkCO0uxUvPYFtE_NKA |
link.rule.ids | 315,783,787,799,27936,27937,55086 |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV1LT9wwEB4hOLQ9lLa0Ynm0PvRU1dnYcRL7uN0WtpSlFQuCWxQ7TkELAUGWSvx6ZpLsCtEeevPBiS3PeOYbzwvgI2HYQruEy8JJrkxYcELhXFqrZEnZjo7eO8YHyehY7Z3Gp0vweZEL471vgs98QMPGl19cuRk9lfWNQnUVo8BdQVytkzZba-EzQEOj7Y8n8Aoj8TsfpghNf28yGaItKEVALG2owMgjLdS0VflLFjcKZmcVxvOttXEl02BW28DdP6na-L97fwUvO6TJBi1rvIYlX72BF4_qD67B_YBJzatLhlLSMhlIvjvp3zKhcXR5wtpAuTvPf1EPAEbZIrx5Qbzw-Z0vGAodfpjTD3-zyeCQDb4O2cl5fcZ-Vnx4dn7NvuRuSmkjFc6d-j-MEsFsy3Jv4Xjn29FwxLtmDNwhIqi5KZ3ShYvS0iahc7FVOkFjS8g89YjK0jSKbVJqkQqjisiXpY5dhLZLoYw2uQmjd7BcXVV-HRhiUlfK0DohvcptbLRHnEB1Z5wqrdA9-DQnTnbd1tzIGlslNBlRMiNKZh0le7BGh72Y2J1zD7bm5My6W3mbIbxDuzvBBTf-_dUHeDY6Gu9n-98PfmzCc1qnjSfbguX6Zua3EYDU9n3Ddw-eAdBz |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=A+28-nm+10-b+2.2-GS%2Fs+18.2-mW+Relative-Prime+Time-Interleaved+Sub-Ranging+SAR+ADC+With+On-Chip+Background+Skew+Calibration&rft.jtitle=IEEE+journal+of+solid-state+circuits&rft.au=Dong-Jin%2C+Chang&rft.au=Choi%2C+Michael&rft.au=Seung-Tak+Ryu&rft.date=2021-09-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=0018-9200&rft.eissn=1558-173X&rft.volume=56&rft.issue=9&rft.spage=2691&rft_id=info:doi/10.1109%2FJSSC.2021.3073976&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9200&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9200&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9200&client=summon |